Novel apparatus and techniques for generating bunched ion beam

A technology of ion beam and ion source, which is applied in electron/ion optical devices, parts of particle separator tubes, particle separation tubes, etc., and can solve problems such as loss

Active Publication Date: 2021-03-16
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Depending on the frequency and magnitude of the AC voltage signal, the acceptance or phase capture of an ion beam conducted through what is known as a "double-gap" constraint using an energized electrode may be About 30% to 35%, which means that the beam current loses more than 65% while conducting into the accelerating stage of the linac

Method used

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  • Novel apparatus and techniques for generating bunched ion beam
  • Novel apparatus and techniques for generating bunched ion beam
  • Novel apparatus and techniques for generating bunched ion beam

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Embodiment Construction

[0017] Apparatuses, systems and methods according to the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the systems and methods are shown. The systems and methods may be implemented in many different forms and are not to be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the systems and methods to those skilled in the art.

[0018] As used herein, an element or operation stated in the singular and preceded by the word "a" or "an" is understood to include plural elements or operations as well. Furthermore, references to "one embodiment" of the present disclosure are not intended to be interpreted as excluding the existence of additional embodiments that also incorporate the recited features.

[0019] Provided herein are ways to implement an improved high e...

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PUM

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Abstract

An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprisesan integral multiple of the first frequency.

Description

technical field [0001] The present disclosure relates generally to ion implantation devices, and more particularly to high energy beamline ion implanters. Background technique [0002] Ion implantation is a process of introducing dopants or impurities into a substrate by bombardment. An ion implantation system may include an ion source and a series of beamline components. The ion source can include a chamber that generates ions. Beamline components may include, for example, mass analyzers, collimators, and various components for accelerating or decelerating the ion beam. Much like a series of optical lenses used to steer a beam of light, a beamline assembly filters, focuses, and steers an ion beam of a particular kind, shape, energy, and / or other quality. The ion beam passes through the beamline assembly and can be directed towards a substrate mounted on a platen or clamp. [0003] One type of ion implanter suitable for producing moderate and high energy ion beams uses a...

Claims

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Application Information

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IPC IPC(8): H01J37/317H01J49/06H01J49/00H05H7/22H05H9/00
CPCH01J2237/047H01J37/3171H01J2237/0268H01J2237/043H01J37/3007H01J49/062H01J49/004H05H7/22H05H9/00H01J37/20
Inventor 法兰克·辛克莱
Owner VARIAN SEMICON EQUIP ASSOC INC
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