Spin orbit moment-based magnetic memory and preparation method thereof
A magnetic memory and spin-orbit technology, which is applied in the manufacture/processing of magnetic field-controlled resistors and electromagnetic devices, can solve the problems of low flip rate and dependence on initial angles, and achieve the goal of increasing flip speed and improving writing efficiency Effect
Pending Publication Date: 2021-03-26
ZHEJIANG HIKSTOR TECHOGY CO LTD
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Problems solved by technology
[0005] In the existing SOT-MRAM, if the free layer and the reference layer are magnetized horizontally, when using in-plane shape anisotropy for magnetization switching, the switching rate is low depending on the initial angle of the magnetic moment
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[0039] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0040] An embodiment of the present invention provides a magnetic memory based on spin-orbit moment, referring to Figure 1-Figure 2 , including: a spin-orbit moment providing line 10, used to provide a spin-orbit moment, the material of the spin-orbit moment providing line is a heavy metal, an antiferromagnetic material or a topological insu...
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Abstract
The invention provides a spin orbital moment-based magnetic memory and a preparation method thereof, the magnetic memory comprises a spin orbital moment providing line used for providing a spin orbital moment; and a magnetic tunnel junction which is located on the surface of one side of the spin orbital moment providing line, the magnetic tunnel junction comprises a free layer, a tunneling layer and a reference layer which are sequentially stacked, wherein the free layer is close to the spin orbital moment providing line, and the free layer and the reference layer are both horizontally magnetized; an acute included angle is formed between the length direction of the magnetic tunnel junction and the width direction of the spin orbital moment providing line, and the length of the magnetic tunnel junction completely covers the width of the spin orbital moment providing line. According to the invention, the MTJ free layer overturning speed can be increased, and the writing efficiency is improved.
Description
technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a magnetic memory based on spin-orbit moment and a preparation method thereof. Background technique [0002] Aiming at the problem that the traditional STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory, spin transfer torque magnetic random access memory) needs to apply a higher write voltage, the industry has proposed a SOT-MRAM (Spin Orbit Torque Magnetic Random Access Memory, spin Orbital Moment Magnetic Random Access Memory), using spin-orbit moment to achieve fast and reliable magnetization switching. This writing technology requires adding a spin-orbit moment supply line (ie, SOT supply line) under the free layer of the Magnetic Tunnel Junction (MTJ), and the current flowing through the spin-orbit moment supply line can induce torque In order to drive the magnetization flip of the free layer, besides the spin Hall effect, the Rashba effect and the unknown...
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IPC IPC(8): H01L43/08H01L43/12H10N50/10H10N50/01
CPCH10N50/01H10N50/10
Inventor 杨晓蕾王明何世坤
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD