Methods and apparatus for controlling ion fraction in physical vapor deposition processes

A physical vapor deposition, magnetron technology, applied in the direction of ion implantation plating, metal material coating process, electrical components, etc., can solve problems affecting the uniformity of substrate deposition, etc.

Pending Publication Date: 2021-04-02
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the inventors have discovered that in some applications, collimators may adversely affect the uniformity of deposition on substrates

Method used

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  • Methods and apparatus for controlling ion fraction in physical vapor deposition processes
  • Methods and apparatus for controlling ion fraction in physical vapor deposition processes
  • Methods and apparatus for controlling ion fraction in physical vapor deposition processes

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Embodiment Construction

[0016] Embodiments of methods and apparatus for controlling ion fractions in physical vapor deposition processes are disclosed herein. The method and apparatus of the present invention advantageously provide better control of ions in a PVD process, thereby further advantageously facilitating control of deposition results such as the uniformity of deposition of material on a substrate. Embodiments of the apparatus and methods of the present invention may also advantageously improve deposition in features in a substrate and reduce the necessary deposition rate by increasing the number of ions and reducing the amount of neutral species deposited on the substrate.

[0017] Embodiments of the disclosure are illustratively described herein with reference to a physical vapor deposition (PVD) chamber. However, the methods of the present invention may be used in any processing chamber modified in accordance with the teachings disclosed herein. figure 1 A PVD chamber (processing chambe...

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Abstract

Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma inthe peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the supportsurface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

Description

[0001] This application is a divisional application of an invention patent application with an application date of March 3, 2017, an application number of 201780014454.6, and an invention title of "Method and Equipment for Controlling Ion Fraction in a Physical Vapor Deposition Process". technical field [0002] Embodiments of the present disclosure generally relate to substrate processing chambers for use in semiconductor manufacturing systems. Background technique [0003] Sputtering (also known as physical vapor deposition (PVD)) is a method of depositing metals in integrated circuits. Sputtering deposits a layer of material on a substrate. A source material, such as a target, is bombarded by ions strongly accelerated by an electric field. The bombardment ejects material from the target, and the material is subsequently deposited on the substrate. During deposition, ejected particles may travel in different directions rather than generally normal to the substrate surfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/34H01L21/02H01L21/203H01L21/285H01L21/683H01L21/768C23C14/35C23C14/54
CPCH01L21/203H01J37/3447H01L21/76871C23C14/54H01J37/3405H01J37/3458H01L21/6835H01J37/3455H01L21/76879H01L21/02631H01L21/2855C23C14/351H01L21/02266H01J37/3411H01J37/3441C23C14/345H01J37/345H01J37/3452H01J37/3402
Inventor 晓东·王李靖珠张富宏马丁·李·瑞克基思·A·米勒威廉·弗鲁赫特曼汪荣军阿道夫·米勒·艾伦守印·张唐先明
Owner APPLIED MATERIALS INC
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