White light-emitting diode based on perovskite and organic material and its preparation method
A technology of light-emitting diodes and organic materials, applied in the field of electroluminescent devices, can solve the problems of low external quantum efficiency, unsatisfactory efficiency of perovskite white light-emitting diodes, and few reports of white light-emitting diode devices, and reduce non-radiative quenching Effect
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Embodiment 1
[0059] The prepared ITO anode was photolithographically formed into an electrode with a width of 3 mm and a length of 20 mm. After cleaning, it was blown dry with nitrogen, and then baked in a vacuum oven at 120 degrees Celsius for 40 minutes. Spin-coated PEDOT:PSS holes with a thickness of 30 nm on the surface of the ITO anode. The layer is implanted / transported and thermally annealed (150°C, 10 minutes). After the substrate was transferred into the glove box, CsPbBr was prepared by spin-coating on the hole injection / transport layer 2.2 Cl 0.8 : PEABr (1:1) two-dimensional, three-dimensional mixed (quasi-two-dimensional) blue perovskite light-emitting layer (thickness 25nm), and thermal annealing treatment (100 ℃, 10 minutes).
[0060] When transferring the substrate to the vacuum coating system, when the vacuum of the vacuum coating system is lower than 5×10 -4 At the time of Pa, the N-type organic energy transfer layer TPBi (with a thickness of 0nm or 7.5nm), and the orga...
Embodiment 2
[0066] The prepared ITO anode was photolithographically formed into an electrode with a width of 3 mm and a length of 20 mm. After cleaning, it was blown dry with nitrogen, and then baked in a vacuum oven at 120 degrees Celsius for 40 minutes. Spin-coated PEDOT:PSS holes with a thickness of 30 nm on the surface of the ITO anode. The layer is implanted / transported and thermally annealed (150°C, 10 minutes). After the substrate was transferred into the glove box, CsPbBr was prepared by spin-coating on the hole injection / transport layer 2.2 Cl 0.8 : PEABr (1:1) two-dimensional, three-dimensional mixed (quasi-two-dimensional) blue perovskite light-emitting layer (thickness 25nm), and thermal annealing treatment (100 ℃, 10 minutes). When transferring the substrate to the vacuum coating system, when the vacuum of the vacuum coating system is lower than 5×10 -4 At the time of Pa, the N-type organic energy transfer layer TPBi (thickness is 7.5nm), 0.3nm-thick organic ultra-thin ligh...
Embodiment 3
[0069] The prepared ITO anode was photolithographically formed into an electrode with a width of 3 mm and a length of 20 mm. After cleaning, it was blown dry with nitrogen, and then baked in a vacuum oven at 120 degrees Celsius for 40 minutes. Spin-coated PEDOT:PSS holes with a thickness of 30 nm on the surface of the ITO anode. The layer is implanted / transported and thermally annealed (150°C, 10 minutes). After the substrate was transferred into the glove box, CsPbBr was prepared by spin-coating on the hole injection / transport layer 2.2 Cl 0.8: PEABr (1:1) two-dimensional, three-dimensional mixed (quasi-two-dimensional) blue perovskite light-emitting layer (thickness 25nm), and thermal annealing treatment (100 ℃, 10 minutes). When transferring the substrate to the vacuum coating system, when the vacuum of the vacuum coating system is lower than 5×10 -4 At the time of Pa, the N-type organic energy transfer layer PO-T2T (thickness: 7.5nm), PO-01 (thickness: 0.5nm), N-type org...
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