Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing head and chemical mechanical polishing device and method

A chemical machinery and polishing head technology, applied in grinding devices, grinding/polishing equipment, grinding machine tools, etc., can solve the problems of difficult to control the thickness at the extreme edge of the wafer, the thickness cannot meet the polishing requirements, etc., to improve the polishing uniformity Effect

Active Publication Date: 2021-04-20
ZING SEMICON CORP
View PDF12 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in a typical polishing process, due to the influence of the force on the wafer during the polishing process and the uniformity of the distribution of the polishing liquid, it is often difficult to control the thickness of the extreme edge of the wafer. Taking a 300mm wafer as an example, in the radius The thickness at 145-149mm often cannot meet the polishing requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing head and chemical mechanical polishing device and method
  • Polishing head and chemical mechanical polishing device and method
  • Polishing head and chemical mechanical polishing device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] In order to solve the problems in the prior art, the invention provides a polishing head, comprising:

[0032] The main body is used to clamp the wafer and make the surface of the wafer to be polished face down for chemical mechanical polishing; wherein,

[0033] An edge liquid supply circuit is provided on the main body, and the edge liquid supply circuit is used to provide liquid to the edge of the wafer during chemical mechanical polishing to change the concentration of the polishing liquid at the edge of the wafer .

[0034] see below figure 1 , Figure 2A-Figure 2B and image 3 A polishing head according to the present invention is exemplified. in, figure 1 It is a schematic plan layout diagram of a chemical mechanical polishing device according to an embodiment; Figure 2A It is a structural schematic diagram of a polishing head according to an embodiment of the present invention; Figure 2B for from Figure 2A Schematic diagram of the structure of the pol...

Embodiment 2

[0059] The present invention also provides a chemical mechanical polishing device, which includes the polishing head as described in the first embodiment.

[0060] According to the chemical polishing device of the present invention, in the chemical mechanical polishing process, the polishing head provides liquid to the edge of the wafer to change the concentration of the polishing liquid on the edge of the wafer, thereby changing the polishing rate of the edge of the wafer, thereby controlling the chemical polishing of the edge of the wafer. The mechanical polishing rate improves the polishing uniformity of the wafer in the chemical mechanical polishing process.

Embodiment 3

[0062] The present invention also provides a chemical mechanical polishing method, which specifically includes: during the process of performing a chemical mechanical polishing process to perform chemical mechanical polishing on a wafer, providing a liquid to the edge of the wafer to change the The concentration of the polishing solution.

[0063] The liquid includes deionized water and / or grinding liquid, wherein the concentration of the grinding liquid is adjustable.

[0064] The liquid that provides liquid to the edge of the wafer includes deionized water or polishing fluid, wherein deionized water is provided to the edge of the wafer to dilute the polishing fluid on the edge of the wafer, thereby reducing the polishing rate of the edge of the wafer; Provide polishing fluid, the concentration of which can be adjusted according to the polishing rate of the wafer edge. For example, when the polishing rate at the edge of the wafer is low, the edge of the wafer is provided wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a polishing head and a chemical mechanical polishing device and method. The polishing head comprises a main body part which is used for clamping a wafer and enabling a to-be-polished surface of the wafer to face downwards so as to carry out chemical mechanical polishing, wherein the main body part is provided with an edge liquid supply loop, and the edge liquid supply loop is used for supplying liquid to the edge of the wafer in the chemical mechanical polishing process so as to change the concentration of a polishing solution at the edge of the wafer. According to the polishing head and the chemical mechanical polishing method, the concentration of the polishing solution on the edge of the wafer is changed by introducing the liquid from the edge of the wafer in the polishing process, so that the chemical mechanical polishing rate of the edge of the wafer is controlled, and the polishing uniformity of the wafer in the chemical mechanical polishing process is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a polishing head, a chemical mechanical polishing device and a method. Background technique [0002] In the semiconductor manufacturing process, the chemical mechanical polishing process is an important means to polish the wafer to improve the flatness of the wafer. [0003] However, in a typical polishing process, due to the influence of the force on the wafer during the polishing process and the uniformity of the distribution of the polishing liquid, it is often difficult to control the thickness of the extreme edge of the wafer. Taking a 300mm wafer as an example, in the radius The thickness at 145-149mm often cannot meet the polishing requirements. [0004] In order to solve the problems in the prior art, the invention provides a polishing head, a chemical mechanical polishing device and a method. Contents of the invention [0005] A series of concepts in simplifie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/10B24B37/30B24B37/34B24B57/02
Inventor 沙酉鹤
Owner ZING SEMICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com