Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ceria serosity combination with reinforced polishing uniformity

A polishing slurry, ceria technology, applied in polishing compositions containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve the problems of wafer surface uniformity deterioration, device reliability deterioration, circuit resistance increase and other problems , to improve polishing uniformity, reduce pitting and erosion

Inactive Publication Date: 2012-03-21
DONGJIN SEMICHEM CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the process of forming the device isolation layer, when the depression 6 occurs, the circuit resistance or the contact resistance increases, and the reliability of the device deteriorates due to electromigration
Moreover, when erosion occurs, the uniformity of the wafer surface deteriorates (this is more severe in a multilayer structure), and the circuit resistance increases and becomes non-uniform

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ceria serosity combination with reinforced polishing uniformity
  • Ceria serosity combination with reinforced polishing uniformity
  • Ceria serosity combination with reinforced polishing uniformity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-7 and comparative Embodiment 1-2

[0024] In order to evaluate the quality of the ceria slurry, a CMP slurry composition was prepared as described below, and the CMP composition was used for chemical mechanical polishing. First, in order to evaluate the effects of polycarboxylic acid and xylitol, the CMP slurry composition was prepared. The CMP slurry composition included 1.0% by weight of cerium dioxide and polyacrylic acid (weight average molecular weight) in an amount as shown in Table 1. 300,000) and xylitol, the rest is deionized water. TMAH is used to control the pH of the slurry. In order to evaluate the polishing effect of the slurry composition, a high density plasma (HDP) method was used to deposit Thickness of SiO 2 Floor. And use low pressure CVD method to deposit Thickness of the silicon nitride layer. The field oxide layer and the silicon nitride layer were polished with the "MomantumTM" polishing equipment manufactured by Speedfam, the "IC1400 pad" manufactured by Rodel, and the above-mentione...

Embodiment 8-10 and comparative Embodiment 3

[0029] In order to measure the depression on the polished wafer, a CMP slurry composition was prepared as shown in Table 2, and chemical mechanical polishing was performed. The prepared CMP slurry composition includes 1.0% by weight of cerium oxide, polyacrylic acid (weight average molecular weight of 200,000) and polyethylene glycol in the amount shown in Table 2, and the rest is deionized water. TMAH is used to control the pH of the slurry. Then, polishing was performed and the quality of the slurry composition was measured in the same manner as described in Example 1. The polishing test was performed with "STI 3 patterned wafer" manufactured by SKW Corporation.

[0030] [Table 2]

[0031]

[0032] As shown in Table 2, the slurry composition containing the polycarboxylic acid or its salt and the alcohol compound shows excellent polishing selectivity of the field oxide layer to the silicon nitride layer and relatively few pits.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a chemical mechanical polishing slurry compound. It comprises: ceric oxide grinding agent; polycarboxylic acids or polycarboxylate with weight average molecular weight being 50,000-500,000; alcohol compound and water. The optimum proportion by weight of components in relative to total slurry compound are: ceric oxide grinding agent 0.1-20%, polycarboxylic acids or polycarboxylate 0.01-20%, alcohol compound 0.001-10%, and the pH of said slurry is 5-10. The CMP slurry compound is processed with STI (shallow slot insulation) method to form multiplayer construction and increase polishing uniformity and inhibit dent and corrosion of chip.

Description

Invention field [0001] The present invention relates to a cerium oxide slurry composition with enhanced polishing uniformity, and more particularly, to a chemical mechanical polishing (CMP) slurry composition, which has enhanced polishing uniformity for silicon wafers and can inhibit the depression of the wafer (dishing) and erosion (erosion). Background of the invention [0002] Recently, due to the development of semiconductor device manufacturing technology and the increasing use of storage devices, high-capacity storage devices have been developed. The capacity expansion technology of the storage device is based on the micro-processing technology, and the precision of the micro-processing technology is increased by 2 times with each generation. In particular, it becomes important to reduce the size of the device isolation layer of the isolation circuit device. LOCOS (Local Oxidation of Silicon) is commonly used as a device isolation technology, which is to selectively grow ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/14
CPCC09G1/02C09K3/1454H01L21/304H01L21/30625H01L21/3212
Inventor 朴钟大孔铉九李凤祥孙祯炫
Owner DONGJIN SEMICHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com