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Light emitting diode epitaxial wafer and preparation method thereof

A technology for light-emitting diodes and epitaxial wafers, which is applied in electrical components, circuits, semiconductor devices, etc., and can solve problems such as affecting the resolution, mixing, and mutual interference of light-emitting devices.

Active Publication Date: 2021-05-11
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At this time, if the distance between two adjacent light-emitting diodes is too close, it is easy to cause mutual interference and light mixing between two adjacent light-emitting diodes, which will affect the resolution of the light-emitting device

Method used

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  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof

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Embodiment Construction

[0032] In order to make the purpose, technical solution and advantages of the present invention clearer, the embodiments of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0033] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those having ordinary skill in the art to which the present disclosure belongs. "First", "second", "third" and similar words used in the specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components . Likewise, words like "a" or "one" do not denote a limitation in quantity, but indicate that there is at least one. Words such as "comprises" or "comprising" and similar terms mean that the elements or items listed before "comprising" or "comprising" include the elements or items listed after "comprising" or "comprising" and their equ...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of light-emitting diode manufacturing. The bonding metal distributed on the first surface of the epitaxial layer is bonded on a substrate of the light-emitting device, and the second surface is a light-emitting surface. The second surface of the epitaxial layer is provided with mesh-shaped isolation grooves, and the projection of each bonding metal on the second surface is correspondingly located in a mesh of one mesh-shaped isolation groove. The part, located between the mesh isolation grooves, of the second surface emits light. The first isolation layer made of light-proof materials is located in the net-shaped isolation groove and fills the net-shaped isolation groove, and it is guaranteed that when the two parts, separated by the net-shaped isolation groove and the first isolation layer, of the second surface emit light, the situation of light interference or light mixing is little. When the light emitting diode epitaxial wafer is applied to a light-emitting device, the first isolation layer can also avoid light interference or light mixing, and the effect of improving the resolution of the light-emitting device applied to the light-emitting diode epitaxial wafer is achieved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of epitaxial wafers is the goal that light-emitting diodes are constantly pursuing. . [0003] When light-emitting diodes are applied to some light-emitting devices, multiple light-emitting diodes are often arranged on the same substrate to emit light together, and individual light-emitting diodes are used as pixels. At this time, if the distance between two adjacent light emitting diodes is too close, it is easy to cau...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/58H01L33/62H01L33/00
CPCH01L33/48H01L33/58H01L33/62H01L2933/0033H01L2933/0058H01L2933/0066
Inventor 张威赵世彬吴志浩李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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