Semiconductor memory and its manufacturing method
A memory and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as abnormal capacitor failure and affecting product yield
Active Publication Date: 2022-05-27
CHANGXIN MEMORY TECH INC
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Problems solved by technology
However, in the electrical testing of products, some capacitors often fail abnormally, which affects the product yield.
Method used
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[0047] In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the related drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0049] As mentioned in...
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The present application relates to semiconductor memories and methods for their manufacture. The preparation method includes: providing a substrate, the substrate has an exposed first region and a second region; forming a capacitor array and a conductive layer covering the capacitor array on the second region; forming an insulating filling layer covering the conductive layer and the first region; forming a first mask layer on the insulating filling layer, opening a first etching window on the first mask layer and etching the insulating filling layer to form a first through hole exposing the first region; depositing a second mask layer to fill the first through hole and cover the first through hole and the first mask layer; open a second etching window on the second mask layer and the first mask layer and perform isotropic etching on the insulating filling layer , forming a second through hole exposing the conductive layer; filling the first through hole and the second through hole with conductive material to form a first contact structure and a second contact structure respectively. Through the above preparation method, the second contact structure can be prevented from penetrating the conductive layer, and the yield of the device can be improved.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor memory and a preparation method thereof. Background technique [0002] Semiconductor memory integrates an array of capacitors that store and release charges to record information. In order to improve the integration of the device, trench capacitors are usually formed above the substrate. Specifically, the substrate is divided into a first area and a second area, the capacitor array is only formed on the second area, a conductive layer in contact with the upper electrode of the capacitor is formed on the capacitor array, and a thick layer is also covered on the conductive layer and the second area. In this case, the thickness of the insulating filling layer in the second region is much larger than the thickness of the insulating filling layer above the conductive layer in the first region. After the insulating filling layer is formed, the electrical connection termi...
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IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/315H10B12/318H10B12/485
Inventor 吴秉桓
Owner CHANGXIN MEMORY TECH INC