A silicon-doped cerium element infrared detector, preparation method and system

Abstract

The invention relates to a silicon-doped cerium element infrared detector, a preparation method and a system. The method includes: implanting arsenic into the back of the silicon wafer as an N-type semiconductor of the diode, and annealing at 1000° C. for 20s; implanting boron on the front of the silicon wafer as a P-type semiconductor of the diode, Inject five times of cerium into the depletion layer of the P-type semiconductor, anneal at 1050°C for 10s; etch away the silicon dioxide on the surface of the silicon wafer by hydrofluoric acid, and put the silicon wafer into a vacuum coating The front and back electrodes are plated in the instrument, and then taken out and annealed at 360°C for 2mins in a rapid thermal annealing furnace; the silicon wafers are cut into individual devices; the etching surface is polished by soaking in 80°C potassium hydroxide solution for 2mins to remove black Wax gets detectors. The invention has a high detection rate in the mid-infrared field at low temperature, and pushes the detection field of the silicon-based photodetector to the near and mid-infrared bands.

Description

technical field [0001] The invention relates to the field of preparation of infrared detectors, in particular to a silicon-doped cerium element infrared detector, a preparation method and a system. Background technique [0002] Silicon-based photodetectors are the main choice in the near-ultraviolet, visible, and ultra-near-infrared spectroscopy fields, but limited by the band gap width, the cut-off wavelength is 1.1 μm, which makes silicon-based photodetectors unsuitable for longer wavelength near-infrared photodetectors. , In the field of mid-infrared, it also includes the commonly used communication band: 1.3μm ~ 1.55μm. This field is occupied by detectors of narrow-bandgap semiconductor materials, such as germanium or indium gallium arsenide. However, it is precisely because of the smaller band gap that the photodetectors prepared from these materials have a larger leakage current with the increase of temperature, resulting in a lower detection rate at room temperature....

AI Technical Summary

Problems solved by technology

However, it is precisely because of the small band gap that the photodetectors made of these materials have a large leakage current with the increase of temperature, resulting in a low detection rate at room temperature.

At the same time, the performance of germanium detectors is limited by its high dark current, InGaAs detectors are difficult to integrate into silicon-based chips or devices, and the cost of these two materials is high

[0003] On the other hand, MCT (Mercury Cadmium Telluride) detectors dominate the mid-infrared market due to their high performance, but they also face the problems of toxic raw materials, the need to work at ultra-low temperatures to achieve high detection rates, and the need for associated silicon-based readout chips. problems, which lead to its high cost

Images