Semiconductor processing apparatus having linear conveyor system

Abstract

Processing tools, components of tools, and methods of making and using such devices for electrochemical processing of microelectronic workpieces. One aspect of the invention is directed toward reaction vessels for electrochemical processing of microelectronic workpieces, processing stations including such reaction vessels, and methods for using these devices. For example, one embodiment of a reaction vessel includes an outer container having an outer wall, a first outlet configured to introduce a primary fluid flow into the outer container, and at least one second outlet configured to introduce a secondary fluid flow into the outer container separate from the primary fluid flow. The reaction vessel can also include at least one electrode, and it can also have a field shaping unit. The field shaping unit, for example, can be a dielectric assembly coupled to the second outlet to receive the secondary flow and configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container. The field shaping unit can also have at least one electrode compartment through which the secondary flow can pass separately from the primary flow. The electrode is positioned in the electrode compartment.

Description

technical field [0001] This application relates to semiconductor processing devices. Background technique [0002] In the manufacture of semiconductor integrated circuits and other semiconductor products from semiconductor wafers, it is often necessary to provide multiple metal layers on the wafer for use as interconnect metallization to electrically interconnect the various devices on the integrated circuit. Aluminum is commonly used for this interconnection, however, copper metallization has been found to be preferable. [0003] In particular, the application of copper on semiconductor wafers has proven to be a major technical challenge. At the same time, copper metallization has not been commercialized due to practical problems in reliably and cost-effectively forming copper layers on semiconductor devices. This is partly because reactive ion etching or other selective removal of copper is more difficult to implement at reasonable production temperatures. It is desirab...

AI Technical Summary

Problems solved by technology

This in turn may make the copper layer subsequently electroplated on the seed layer non-uniform

This non-uniformity can cause chipping or failure of the formed semiconductor device

Images