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How to obtain surface temperature field information

A surface temperature and acquisition method technology, which is applied in the fields of temperature recording, radiation pyrometry, optical radiation measurement, etc.

Active Publication Date: 2022-08-02
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Based on this, it is necessary to address the problem that the temperature field of micro-nano devices when tested on a micro-infrared imaging platform is quite different from the temperature field in the actual working environment under a specific power in the existing test methods, and provide a Method for acquiring surface temperature field information

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  • How to obtain surface temperature field information
  • How to obtain surface temperature field information
  • How to obtain surface temperature field information

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Embodiment Construction

[0019] In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the related drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.

[0020] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical", "horizontal", "left", "right", "upper", "lower", "front", "rear", "circumferential" and similar...

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Abstract

The invention relates to the technical field of micro-nano device testing, and discloses a method for acquiring surface temperature field information. Install the sample to be tested in the actual application environment, and test to obtain the first frequency drift characteristic curve of the sample to be tested in the actual application environment; fix the sample to be tested on the infrared imaging device, and test to obtain the sample to be tested on the infrared imaging device. The second frequency drift characteristic curve of The second power is applied; the second power is applied to the sample to be tested fixed on the infrared imaging device, and the surface temperature field information of the sample to be tested is obtained by using the infrared imaging device. By establishing the mapping from the actual working environment to the micro-infrared test environment, the test error caused by the difference in thermal conductivity of the micro-infrared test environment relative to the actual working environment is eliminated.

Description

technical field [0001] The invention relates to the technical field of micro-nano device testing, in particular to a method for acquiring surface temperature field information. Background technique [0002] Micro-nano devices used in the field of high-power loads, such as semiconductor power devices and BAW filters, etc., under high-power loads, the heating of the device itself will seriously affect the performance and reliability of the device. Therefore, the self-heating effect of micro-nano devices under high power load and its temperature field (including key characteristic parameters such as maximum temperature and average temperature), the degradation characteristics of key performance parameters of micro-nano devices under temperature field, etc. The structural design of the micro-nano device, the establishment of the heating model, and the reliability evaluation or failure mechanism analysis of the device all play an important role. In the existing testing methods, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/48G01J5/02G01J5/80
CPCG01J5/0007G01J5/02G01J2005/0077G01J5/80
Inventor 黄钦文恩云飞付志伟邵伟恒董显山来萍王蕴辉
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST