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A graphene-based life detector

A graphene-based detector technology, applied in the field of life detectors, can solve the problems of accelerating the transmission of semiconductor photogenerated carriers, unable to generate photocurrent, low absorbance, etc., to increase the light-receiving area and photoelectric signal processing accuracy, without Dead angle search, strong chemical inert effect

Active Publication Date: 2022-07-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, for commercial silicon-based infrared sensors, due to the extremely shallow transmission depth of infrared light in silicon, the photogenerated carriers are all concentrated on the surface of silicon, while for generally constructed junction devices with a certain depth, the carrier recombination effect It will cause the optical gain of the device to decrease rapidly with the decrease of the wavelength of the incident light, so the detection ability of silicon-based optoelectronic devices for infrared light is slow
Graphene absorbs all wavelengths of light and its carrier mobility is extremely high, so graphene-based infrared optoelectronic devices have attracted the attention of many people; currently, graphene-based infrared optoelectronic devices mainly use Most of them are single-layer or few-layer (less than 5 layers) graphene, but because the absorbance of single-layer and few-layer graphene is very low, it cannot absorb light of sufficient intensity, so it cannot produce effective photocurrent, so most of the current graphite Alkene-based optoelectronic devices mainly use the high carrier mobility of graphene to accelerate the transport of photogenerated carriers generated by semiconductors.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1: Preparation of Weak Coupling Enhanced Graphene Film

[0036] The graphene oxide is prepared by centrifugal spraying to prepare a nano-thick film. After the nano-film is separated from the substrate, the temperature is raised to 2000 degrees at a rate of 10 degrees Celsius per minute, maintained for 2 hours, and then heated to 2300 degrees Celsius for 4 hours.

[0037] like figure 1 , the measured I of the graphene film D / I G is 0, the AB structure content is 50%, the graphene structure includes 63 graphene units, the number of layers of the graphene unit is 2 on average, and includes several graphene units composed of single-layer graphene sheets and several graphene units. A graphene unit composed of two or more graphene sheets in an AB stacking manner, such as 5 graphene units composed of a single-layer graphene sheet and 1 graphene unit composed of 7 layers of graphene sheets in an AB stacking manner .

[0038] figure 2 is a partial cross-sectional ...

Embodiment 2

[0045] The graphene film prepared in Example 1 is made into an optoelectronic device according to the following steps:

[0046] (1) First, reserve a working window on the Si substrate, plate an insulating layer outside the working window, and then sputter a Pt electrode layer in the insulating layer;

[0047] (2) The graphene film is firstly laid on the working window and in contact with the electrode layer, and ethylene glycol is dripped at the edge of the graphene film, and the ethylene glycol penetrates from the edge of the graphene film to the inside, volatilizes the solvent, and uses the The surface tension realizes the close combination of the film and the semiconductor, and an independent optoelectronic device is obtained;

[0048] (3) encapsulate, and connect with the electrode layer and the semiconductor substrate of the optoelectronic device respectively by using the lead wire, so as to output the detection signal.

[0049] The electrodes and semiconductors of the d...

Embodiment 3

[0053] Utilize the photoelectric device assembled in Example 2 to assemble the detector of the application, as follows:

[0054] A wire is drawn from the Si semiconductor end and the graphene film end respectively, and then covered with a visible filter of Thorlabs model. Greater than 90% to eliminate the influence of other wavelengths of light. Then cut into equilateral triangles and assemble to form an icosahedral structure (such as image 3 During the assembly process, the leads of the 20 graphene ends were connected to the positive electrode of the keithley source meter, and the leads of the 20 Si semiconductor ends were connected to the negative electrode of the keithley source meter, and a reverse bias of -2V was applied using the keithley source meter.

[0055] Set the above detector and another commercially available infrared detector (Shunze Electric Power Equipment Co., Ltd. Fire Earthquake Rescue Life Detector) 10 meters away from an adult (male, 30 years old, heig...

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Abstract

The invention discloses a graphene-based life detector, comprising an infrared sensor, a telescopic mechanical arm, a signal processing unit and an alarm, the infrared sensor is fixed at the front end of the telescopic mechanical arm, and the infrared sensor and the alarm are respectively connected with the signal processing unit connected. The infrared sensor is an icosahedral structure composed of triangles, and the surface of the icosahedral structure is an optoelectronic device composed of a semiconductor, a multilayer graphene film and an infrared filter layer. The film is laid on the semiconductor, and finally an infrared filter layer is coated. Through the icosahedral base structure, it is exposed to the environment with the largest specific surface area as possible to search for signs of life under the ruins after natural disasters. The response distance of the life detector is greatly improved, and the sensitivity of the infrared response and the convenience of use are also improved.

Description

technical field [0001] The invention relates to a life detector, in particular to a graphene-based life detector. Background technique [0002] With the continuous deepening of my country's military-civilian integration development strategy, more and more advanced technologies and professional equipment are slowly leaving the army and entering the people. Among them, infrared detection technology is a typical representative. Infrared detection technology was originally used in the military field, and now it has gradually become civilian, and has been widely used in basic research, equipment maintenance, industrial testing, fire safety and other fields. my country is a large country with a vast territory and diverse geographical features, and natural disasters occur frequently. When disasters such as earthquakes, landslides, and mudslides occur, a large number of casualties are caused every year. Therefore, it is urgent to upgrade emergency search and rescue work to a higher...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/028G01V15/00
CPCH01L31/109H01L31/028G01V15/00Y02P70/50
Inventor 高超沈颖彭蠡
Owner ZHEJIANG UNIV