A kind of reactive ion etching device and method for continuously preparing large-area nano textured surface

Abstract

The invention relates to a reactive ion etching method for continuously preparing a large-area nano-textured surface, comprising S1: cleaning and pretreating a pre-textured silicon chip; S2: placing the damaged silicon chip on a carrier plate of a loading platform After that, enter the process chamber through the loading chamber and the process buffer chamber in turn; S3: open the vacuum equipment, SF 6 , O 2 and SiCl 4 Etching gas enters the process chamber uniformly from the linear ion source distribution holes; S4: Turn on the radio frequency power supply and magnetic field device, and the etching gas is ionized to generate plasma; under the action of the electric field, the high-energy ions shoot vertically to the sample surface for physical bombardment, and the process is completed. Etching of the silicon wafer in the process chamber; S5: The silicon wafer passes through the unloading buffer chamber and the unloading chamber sequentially from the process chamber along with the carrier, and is finally taken out to the unloading table. The invention combines a plurality of large-size linear ion sources to realize large-area uniform etching. Continuous dynamic etching of silicon wafers can be realized through the synergistic effect of loading chamber, unloading chamber and conveying mechanism, which greatly improves the production capacity of RIE.

Description

technical field [0001] The invention relates to the technical field of solar nano-velvet production, in particular to a reactive ion etching device and method for continuously preparing large-area nano-velvet. Background technique [0002] In the manufacturing process of crystalline silicon solar cells, in order to reduce the surface reflectance of silicon wafers and reduce light loss, the surface of silicon wafers is often textured to form a micro-nano light-trapping structure on the surface, commonly known as "texturing". ". In the prior art, due to the strong anisotropy and high etching selection ratio of the RIE texture making process, nano-scale texture (less than 1um) can be produced to form a texture structure with low reflectivity, while As an important method for texturing the surface of silicon wafers. However, during the RIE texturing process, ions bombard the surface of the silicon wafer under the action of self-bias for etching, which will also cause a certain...

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is: how to overcome the problems of low production capacity and large surface damage caused by the etching process of the existing reactive ion etching technology, further improve the etching production capacity, reduce the etching damage, and provide a continuous preparation of large-area Reactive ion etching device for nanotexture

Images