Reactive ion etching device and method for continuously preparing large-area nano suede
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A technology of reactive ion etching and nano suede, which is applied in the direction of nanotechnology, sustainable manufacturing/processing, transportation and packaging, etc., can solve the problems of large surface damage and low production capacity, so as to improve production capacity, ensure rapid continuity, The effect of continuous dynamic etching
Active Publication Date: 2021-07-02
JIANGSU UNIV +2
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[0010] The technical problem to be solved by the present invention is: how to overcome the problems of low production capacity and large surface damage caused by the etching process of the existing reactive ion etching technology, further improve the etching production capacity, reduce the etching damage, and provide a continuous preparation of large-area Reactive ion etching device for nanotexture
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Embodiment 1
[0061] 1. Clean and pretreat the pre-fabricated silicon wafer to obtain the damaged silicon wafer.
[0062] 2. Put the damaged silicon wafer on the carrier plate of the loading table, and the carrier plate is driven by the transmission rollers into the process chamber through the loading chamber and the process buffer chamber in turn;
[0063] 3. Turn on the vacuuming equipment, press the air pressure until the predetermined vacuum value is 1Pa, and feed SF from the process air intake equipment 6 , O 2 and SiCl 4 Etching gas, the gas flow rate is 1900sccm, 3000sccm and 1500sccm respectively, turn on the magnetic field device, the etching gas enters the process chamber uniformly from the linear ion source distribution holes, and maintain the process chamber pressure at 24Pa.
[0064] 4. Turn on the radio frequency power supply, turn on the magnetic field device, the power of the high frequency power supply is 1950W, and the power of the low frequency power supply is 750W. The...
Embodiment 2
[0069] 1. Clean and pre-treat the pre-fabricated silicon wafers to obtain the damaged silicon wafers;
[0070] 2. Put the damaged silicon wafer on the carrier plate of the loading table of the reactive ion etching equipment. The reactive ion etching equipment such as figure 1 As shown, it includes a loading table, a loading chamber, a process buffer chamber, a process chamber, an unloading buffer chamber, an unloading chamber, an unloading table, a base, and a conveying system. Driven by the transmission rollers, the carrier board passes through the loading chamber and the process buffer chamber of the reaction ion equipment in turn, and enters the process chamber;
[0071] 3. Turn on the vacuuming equipment until the predetermined vacuum value is 0.5Pa, and enter the SF from the process air intake equipment 6 , O 2 and SiCl 4 For etching gas, the gas flow rates are 1850sccm, 2900sccm and 1650sccm respectively. The magnetic field device is turned on, and the etching gas ent...
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Abstract
The invention relates to a reactive ion etching method for continuously preparing a large-area nano suede. The reactive ion etching method comprises the following steps: S1, cleaning and pretreating a silicon wafer of prefabricated suede; S2, placing the damaged silicon wafer on a carrier plate of a loading table, and then entering a process cavity through a loading cavity and a process buffer cavity in sequence; S3, vacuumizing equipment is started, and SF6, O2 and SiCl4 etching gases uniformly enter the process cavity from gas distribution holes of the linear ion source; S4, turning on the radio frequency power supply and the magnetic field device, and ionizing the etching gas to generate plasma, wherein the high-energy ions are vertically emitted to the surface of the sample under the action of an electric field, physical bombardment is carried out, and etching of the silicon wafer in the process cavity is completed; and S5, enabling the silicon wafer to sequentially pass through the unloading buffer cavity and the unloading cavity from the process cavity along with the support plate, and finally reaching the unloading table to be taken out. According to the invention, a plurality of large-size linear ion sources are combined together, so that large-area uniform etching is realized. Through the synergistic effect of the loading cavity, the unloading cavity and the conveying mechanism, the continuous dynamic etching of the silicon wafer can be realized, and the RIE productivity is greatly improved.
Description
technical field [0001] The invention relates to the technical field of solar nano-velvet production, in particular to a reactive ion etching device and method for continuously preparing large-area nano-velvet. Background technique [0002] In the manufacturing process of crystalline silicon solar cells, in order to reduce the surface reflectance of silicon wafers and reduce light loss, the surface of silicon wafers is often textured to form a micro-nano light-trapping structure on the surface, commonly known as "texturing". ". In the prior art, due to the strong anisotropy and high etching selection ratio of the RIE texture making process, nano-scale texture (less than 1um) can be produced to form a texture structure with low reflectivity, while As an important method for texturing the surface of silicon wafers. However, during the RIE texturing process, ions bombard the surface of the silicon wafer under the action of self-bias for etching, which will also cause a certain...
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