Power circulation main circuit suitable for GaN power semiconductor device
A power semiconductor and power cycle technology, applied in the direction of single semiconductor device testing, bipolar transistor testing, etc., to achieve the effect of ensuring consistency, reducing power fluctuations, and overcoming parameter inconsistencies
Pending Publication Date: 2021-07-20
CHONGQING UNIV
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Problems solved by technology
[0005] In view of the above-mentioned deficiencies existing in the existing power cycle main circuit, the technical problem to be solved by the present invention is: how to provide a power cycle test that can realize multiple power semiconductor devices at the same time, and can better overcome the existence of traditional power cycle circuits. It is suitable for the power cycle main circuit of GaN power semiconductor devices to solve the problem of parameter inconsistency, simplify the gate design, and avoid the gate oscillation phenomenon of GaN power semiconductor devices
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[0019] In order to make the description more clear, combined with the manual attached Figure 1 to Figure 5 , the present invention will be described in further detail.
[0020] Such as figure 1 As shown, a power cycle main circuit suitable for GaN power semiconductor devices includes multiple parallel circuits of the device under test and a bypass circuit, and the circuit of the device under test is composed of the first large current switch and the device under test in series , the bypass circuit is composed of a second large current switch and a bypass resistor connected in series; it also includes a controller, the controller is used to control each device under test circuit and the first and second high current switches in the bypass circuit On and off, and adopt a time-sharing conduction control strategy, that is, only one circuit flows a large current at the same time. The DUT drivers are connected to the DUT gate and source. The first high-current switch can be real...
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The invention discloses a power cycle main circuit suitable for a GaN power semiconductor device, which comprises a plurality of to-be-tested device circuits connected in parallel and a bypass circuit, each to-be-tested device circuit is formed by connecting a first large-current switch and a to-be-tested device in series, and the bypass circuit is formed by connecting a second large-current switch and a bypass resistor in series; the power cycle main circuit also comprises a controller, the controller is used for controlling the on-off of the first and second large current switches in each to-be-tested device circuit and the bypass circuit, and a time-sharing conduction control strategy is adopted, i.e., large current flows through only one circuit at the same time. The circuit is used for the power cycle test of a plurality of GaN power semiconductor devices, the problem of series connection non-voltage-sharing or parallel connection non-current-sharing possibly caused by a traditional power cycle circuit is eliminated, the consistency of power cycle test conditions is guaranteed, and meanwhile the circuit has the advantages of being high in power supply utilization rate and the like.
Description
technical field [0001] The invention relates to the technical field of power module testing, in particular to a power cycle main circuit suitable for GaN power semiconductor devices. Background technique [0002] With the rapid development of semiconductor technology and power electronics technology, semiconductor power devices have been widely used in many fields such as new energy power generation, rail transportation, and consumer electronics. The development trend of high frequency and high power density of power electronics technology has put forward higher requirements for semiconductor power devices, and third-generation power semiconductor devices such as GaN (gallium nitride) have also developed rapidly. GaN was originally used in military fields such as radar and lasers. Due to the maturity of technology and the decline in cost, it has gradually developed into the civilian field in recent years. It is widely used in power electronics fields such as server power sup...
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IPC IPC(8): G01R31/26
CPCG01R31/2608
Inventor 孙鹏菊黄旭贺致远詹小华王岩王凯宏罗全明杜雄
Owner CHONGQING UNIV