Flash memory data reading-writing method and device, storage medium and terminal equipment
A technology of data reading and writing and data writing, which is applied in flash memory data reading and writing methods, storage media, terminal equipment, and devices, can solve problems such as wasting time and resources, save time, save resources, and reduce the probability of data errors Effect
Pending Publication Date: 2021-07-23
CHIPONE TECH BEIJINGCO LTD
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Problems solved by technology
[0003] In the prior art, the smallest unit of erasing flash memory is generally block (block) or sector (sector), which brings about the problem that each time the data in the flash memory is modified, it is usually necessary to erase most of the data without modification. data, wasting a lot of time and resources, so there is an urgent need for a more efficient way to modify data in flash memory
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[0033] Various exemplary embodiments, features, and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numbers in the figures indicate functionally identical or similar elements. While various aspects of the embodiments are shown in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
[0034] The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as superior or better than other embodiments.
[0035] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the following specific implementation manners. It will be understood by those skilled in the art that the present disclosure may be practiced without some of the specific details. In some instances, methods, means, componen...
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The invention relates to a flash memory data reading-writing method and device, a storage medium and terminal equipment. The method comprises the following steps: reading first data in a first region in a flash memory according to a data reading instruction; under the condition that the address of the first data comprises the address of second data, reading third data in a second area in the flash memory, wherein the frequency of modifying the second data is higher than the frequency of modifying other data in the first area; and replacing the second data in the first data with the third data according to an address mapping relationship between the second data and the third data to obtain replaced first data. According to an embodiment of the invention, when the flash memory data is read, the data with higher modification frequency can be read according to the second area, and the first area does not need to be modified frequently, so the probability of data errors is reduced, a large amount of resources are saved, and the service life of the flash memory is prolonged.
Description
technical field [0001] The present disclosure relates to the field of terminal equipment, and in particular to a flash memory data reading and writing method, device, storage medium and terminal equipment. Background technique [0002] In mobile communication devices, flash memory (Flash) is generally used as a storage medium. Flash memory is a kind of non-volatile memory (non-volatile random access memory, NVRAM), which belongs to a kind of ROM, and can be erased and written more than 100,000 times. [0003] In the prior art, the smallest unit of erasing flash memory is generally block (block) or sector (sector), which brings about the problem that each time the data in the flash memory is modified, it is usually necessary to erase most of the data without modification. A lot of time and resources are wasted, so there is an urgent need for a more efficient way to modify data in the flash memory. Contents of the invention [0004] In view of this, the present disclosure ...
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Login to View More IPC IPC(8): G06F12/02
CPCG06F12/0246G06F2212/7201
Inventor 李士达雍尚刚武甲东
Owner CHIPONE TECH BEIJINGCO LTD