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A data processing method and device for a nand flash memory device

A data processing and data technology, applied in electrical digital data processing, input/output process of data processing, generation of response errors, etc., can solve problems such as being difficult to be accepted, retention errors, etc., to improve overall performance and reduce retention Errors, the effect of reducing the probability of data errors

Active Publication Date: 2018-07-06
DERA CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since this encoding algorithm only retains errors for data and is ineffective for interference errors, it is necessary to use the common BCH / LDPC error correction technology at the same time, so that the 6.3% space cost of the asymmetric encoding algorithm is the extra BCH / LDPC redundant code. The added cost is hard to accept

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  • A data processing method and device for a nand flash memory device
  • A data processing method and device for a nand flash memory device
  • A data processing method and device for a nand flash memory device

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Embodiment Construction

[0048] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0049] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have meanings consistent with the meanings in the co...

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Abstract

Disclosed are a data processing method and apparatus for an NAND flash memory device, wherein the method comprises: when a data write-in request command sent by a host is received, determining a page, corresponding to block data to be processed, in a storage unit to be operated of the NAND flash memory device (S11); according to the type of page and a data characteristic of the block data to be processed, carrying out, according to a pre-set rule, a complementary operation for the block data to be processed, and identifying a data processing mode for a metadata area of the corresponding page of the storage unit to be operated (S12); and encoding the processed block data to be processed, and writing the encoded data into the storage unit to be operated (S13). According to the data processing method and apparatus for the NAND flash memory device, the data error occurrence probability of the NAND flash memory device can be effectively reduced, and the overall performance of the NAND flash memory device is improved.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a data processing method and device of a NAND flash memory device. Background technique [0002] Compared with traditional mechanical hard drives, solid-state drives have a qualitative leap in access speed. For MLC NAND flash memory devices, by applying MLC NAND flash memory to solid-state hard drives, the storage density of the memory can be greatly increased and the storage cost can be reduced. MLC NAND refers to multi-level cell (Multi-Level Cell) NAND flash memory. If a storage unit of NAND flash memory only stores one bit of data, it is called SLC (Single-Level Cell) NAND flash memory. If it can store 2 bits of data, it is called multi-level cell (MLC) NAND flash memory. If it can store 3 A bit of data, known as triple-level cell (TLC) NAND flash memory. However, since multiple bits of data are stored in one storage unit of the MLC NAND flash memory device, the proba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F11/10
CPCG06F3/0619G06F3/0659G06F3/0679G06F11/1012G06F11/1068
Inventor 王凤海杨骥张建涛夏杰旭王嵩
Owner DERA CO LTD