A Miniaturized Wide Rejection Band Low-Pass Microstrip Filter
A technology of microstrip filter and suppression band, which is applied in the field of filters, can solve the problems of insufficient compactness of the overall structure, increase in the size of the filter, and unreasonable layout of the printed circuit board. The effect of small size and low processing cost
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Embodiment 1
[0038] This embodiment takes the structure of a 0-8G low-pass filter as an example, in which the dielectric constant of the dielectric substrate is 3.55 and the thickness is 0.8128 mm. like figure 2 As shown, the size parameters of the structures on the etched circuit layer 3 in the filter are as follows: W1=2mm, L1=5.6mm, W2=0.3mm, L2=4.7mm, W3=0.4mm, L3=0.4mm, W4=3.4mm, L4=2.3mm, W5=0.6mm, L5=2.1mm, W6=0.05mm, L6=1.85mm, R1=1.4mm, R2=3mm, θ 1 =0.18π, θ 2 =0.18π. The size of the low-pass filter is 15.8mm×8mm, and the filter has the advantage of better miniaturization.
[0039] like image 3 The parameter simulation diagram of S11 and S12 obtained after the filter of the above structure and size is simulated and modeled in the electromagnetic software, it can be seen from the figure that the cut-off frequency of the filter is 8.21GHz, and in the passband, from DC to In the range of 7.59GHz, the in-band insertion loss is less than 1dB, thus achieving better in-band transm...
Embodiment 2
[0041] The difference between this embodiment and Embodiment 1 lies in the dimension parameters of the partial structures on the etched circuit layer 3 in the filter. like figure 2 As shown, the size parameters of each structure on the etched circuit layer 3 in the filter are as follows: W1=1.6mm, L1=5.6mm, W2=0.3mm, L2=4.7mm, W3=0.4mm, L3=0.4mm , W4=3.4mm, L4=2.3mm, W5=0.6mm, L5=1.85mm, W6=0.05mm, L6=5.42mm, R1=1.2mm, R2=3mm, θ 1 =0.16π, θ 2 =0.16π. The size of the low-pass filter is 15.8mm×8mm, and the filter has the advantage of better miniaturization.
[0042] like Figure 4 The parameter simulation diagram of S11 and S12 obtained after the filter of the above structure and size is simulated and modeled in the electromagnetic software, it can be seen from the figure that the cut-off frequency of the filter is 8.15GHz, in the passband, from DC to In the range of 7.82GHz, the in-band insertion loss is less than 1dB, and the S12 in the passband is basically less than 20...
Embodiment 3
[0044] The difference between this embodiment and Embodiment 1 lies in the dimension parameters of the partial structures on the etched circuit layer 3 in the filter. like figure 2 As shown, the size parameters of the structures on the etched circuit layer 3 in the filter are as follows: W1=1.6mm, L1=5.6mm, W2=0.5mm, L2=4.7mm, W3=0.9mm, L3=0.4mm , W4=3.4mm, L4=2.3mm, W5=0.6mm, L5=1.85mm, W6=0.05mm, L6=5.42mm, R1=1.4mm, R2=3mm, θ 1 =0.18π, θ 2 =0.18π. The size of this low-pass filter is 15.8mm x 8mm , The filter has better miniaturization advantages
[0045] like Figure 5 The parameter simulation diagram of S11 and S12 obtained after the filter of the above structure and size is simulated and modeled in the electromagnetic software, it can be seen from the figure that the cut-off frequency of the filter is 8.11GHz, and in the passband, from DC to In the range of 7.65GHz, the in-band insertion loss is less than 1dB, thus achieving better in-band transmission performance....
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