Electron beam electrostatic deflector control system and method for electron beam exposure machine

Abstract

The invention discloses a control system and method for an electron beam electrostatic deflector used in an electron beam exposure machine. The present invention adopts the main controller, the electrostatic deflection signal controller and the electrostatic deflection signal generator to realize the system control of the electrostatic deflector, adopts the hierarchical control relationship, transmits the control parameters through the hierarchical control signals, and the system adopts a unified communication protocol and interface , the user can control the system by only mastering the top-level control commands; the linear amplification gain of the signal in the electrostatic deflection signal generator is adjustable, which makes the system function design and performance adjustment have a large degree of freedom; in addition, the system under the action of control parameters , the original scanning signal is converted in real time into the required high-voltage deflection signal applied to each deflection electrode of the electrostatic deflector, which ensures the scanning signal generation speed and realizes the system control of the high-voltage deflection signal on each deflection electrode.

Description

technical field [0001] The invention relates to the control of an electron beam electrostatic deflector applied to an electron beam exposure machine, in particular to an electron beam electrostatic deflector control system for an electron beam exposure machine and a control method thereof. Background technique [0002] Electron beam exposure technology is a micro-nano structure pattern transfer technology that uses high-energy electron beams to project and write or scan the chemical polymer resist film spin-coated on the substrate to obtain micro-nano structures on the surface of the substrate. Electron beam exposure machine is a professional instrument for realizing electron beam exposure technology. [0003] In order to realize the electron beam scanning and writing function, it is necessary to achieve precise and controllable deflection of the electron beam, and then obtain the scanning pattern by continuously changing the offset position. Electron beam deflection can be...

AI Technical Summary

Problems solved by technology

The application of magnetic deflection technology in electron microscope imaging has the characteristics of high structural parameter tolerance, simple control signal processing, and low scanning field distortion; however, magnetic deflection is affected by the hysteresis effect of the scanning coil, and the scanning speed is limited, so it cannot be applied to scanning In technologies requiring higher speed

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