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SiGe/Si heterojunction material for IR detector

An infrared detector and heterojunction technology, applied in the field of infrared detectors, can solve the problems of inability to work with liquid nitrogen refrigerants and low working temperature, and achieve the effects of high yield, good uniformity and wide application range

Inactive Publication Date: 2003-12-31
FUDAN UNIV
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  • Summary
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  • Application Information

AI Technical Summary

Problems solved by technology

Although this kind of detector has its importance in application, the SiGe / Si detector working in this waveband has a very serious shortcoming, that is, the working temperature is too low, and it can only be used at a temperature lower than 50K. Therefore, it must be equipped with a special refrigerator, and it cannot work with liquid nitrogen as a refrigerant
This brings a lot of trouble and difficulty to the application, and also brings a lot of restrictions

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Embodiment, making SiGe heterojunction material: Si 1-x G x , take x=0.48 here. Its production steps are as follows:

[0022] 1. Chemical treatment of silicon substrate:

[0023] (1) in H 2 SO 4 :H 2 o 2 =3:1 (volume ratio, the same below) boil for 3 minutes, pour off the solution, rinse with deionized water, and then ultrasonically clean.

[0024] (2) in NH 4 OH:H 2 o 2 :H 2 O=1:2:5 solution boiled. Pour off the solution and rinse with deionized water.

[0025] (3) in HCl: H 2 o 2 :H 2 O=1:2:8 solution boiled. Pour off the solution and rinse with deionized water. You can repeat (2) and (3) once each.

[0026] (4) Boil in concentrated nitric acid for 3 minutes and rinse with deionized water. Then use HF:H 2 Rinse with O=1:10 solution for 15 seconds, and then rinse with deionized water. Can be repeated 2-3 times.

[0027] (5) in HCl: H 2 o 2 :H 2 O=3:1:1 solution was boiled for 3 minutes. Wash 2-3 times with deionized water and ultrasonic. Dry ...

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Abstract

A heterojuction material of SiGe / Si for infrared detector has the composition of SiGe as Si1-Gex, 0.45<(or=)x<(or=)0.55. The working wave section of material is 3-5 micron m and working temperature is more 80 K, for maximum up to 105K. The infrared detector made of this material can work at room temperature with liquid nitrogen as an refrigerating agent and in the outer space (environmetal temp. 105 K) without any refrigerating agent.

Description

technical field [0001] The invention belongs to the technical field of infrared detectors, and in particular relates to a silicon germanium / silicon heterojunction material for infrared detectors. Background technique [0002] SiGe / Si (silicon germanium / silicon) heterojunction internal emission infrared detector (hereinafter referred to as SiGe / Si detector) is a silicon-based detector developed in the 1990s. Since the forbidden band width of silicon is 1.1ev and that of germanium is 0.67ev, neither of these two materials can be used to develop a detector with an operating wavelength greater than 1.5 μm. SiGe / Si detectors work by utilizing the energy band shift between SiGe alloy and Si material. Under infrared irradiation, holes in SiGe transition through the potential barrier of the valence band between SiGe and Si, forming photocurrent. This detector is a photovoltaic type detector. Since the advent of SiGe / Si detectors, people's work has been focused on the development ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/0288H01L31/18
CPCY02P70/50
Inventor 张翔九胡际璜
Owner FUDAN UNIV
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