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Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn

An infrared detector and heterojunction technology, applied in the field of infrared detectors, can solve the problems of inability to work with liquid nitrogen refrigerants and low working temperature, and achieve the effects of superior performance-price ratio, low cost, and high blackbody response rate

Inactive Publication Date: 2004-02-04
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this kind of detector has its importance in application, the SiGe / Si detector working in this waveband has a very serious shortcoming, that is, the working temperature is too low, and it can only be used at a temperature lower than 50K. Therefore, it must be equipped with a special refrigerator, and it cannot work with liquid nitrogen as a refrigerant
This brings a lot of trouble and difficulty to the application, and also brings a lot of restrictions

Method used

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  • Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn
  • Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn
  • Inner emitting infrared detector with 3-5 micron Si-Ge/Si heterojunction and its prepn

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Embodiment

[0023] Silicon substrate: Si(100), P type, resistivity 10-20Ω-cm, polished.

[0024] 1. Thermal oxidation on silicon substrate to generate SiO 2 layer with a thickness of 8000 Angstroms.

[0025] 2. In SiO 2 A square ring-shaped boron diffusion window is photo-etched on the top, that is, p in the attached figure + area, the left and right outer width of the square ring-shaped window is 86 μm, and the inner width is 74 μm, that is, the width of the ring is 6 μm. Boron diffusion is performed in this window, the sheet resistance is 15Ω / □, and the junction depth is 2μm.

[0026] 3. In P + In the area surrounded by the periphery of the area, a square ring light phosphorus diffusion window is photoetched, that is, the n area in the figure, the outer width of the window is 62 μm, and the inner width is 50 μm, that is, the width of the ring is 6 μm; Phosphorus is diffused, the sheet resistance is 500Ω / □, and the junction depth is 1μm.

[0027] 4. Photoetching the thick phosphoro...

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Abstract

The present invention belongs to the technology of IR detector and the IR detector has window of molecular beam epitaxy SiGe / Si hetedrojuction material. The detector has working bandwidth of 3-5 microns, working temperature of 80K, highest 105K, and excellent performance. It may be operated on liquid nitrogen in room temperature and on no refrigerant in outer space. It has high blackbody responsivity and blackbody detectivity, and is manufactured with large size silicon chip. The preparation of the present invention is suitable for manufacturing large scale IR detector plane array with high performance-to-cost ration.

Description

technical field [0001] The invention belongs to the technical field of infrared detectors, and in particular relates to a SiGe / Si heterojunction internal emission infrared detector and a preparation process thereof. Background technique [0002] SiGe / Si (silicon germanium / silicon) heterojunction photoemission infrared detector (hereinafter referred to as SiGe / Si detector) is a silicon-based detector developed in the 1990s. Since the forbidden band width of silicon is 1.1ev and that of germanium is 0.67ev, neither of these two materials can be used to develop a detector with an operating wavelength greater than 1.5 μm. SiGe / Si detectors work by utilizing the energy band shift between SiGe alloy and Si material. Under infrared irradiation, holes in SiGe transition through the potential barrier of the valence band between SiGe and Si, forming photocurrent. This detector is a photovoltaic type detector. Since the advent of SiGe / Si detectors, people's work has been focused on ...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/18
CPCY02P70/50
Inventor 张翔九胡际璜
Owner FUDAN UNIV
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