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High-current driving device for SiC MOSFET in pulse power application

A driving device and pulse power technology, applied in the pulse field, can solve the problems of lack of ultra-fast gate drive research and other issues

Active Publication Date: 2021-09-07
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SiC MOSFET is the main switch commonly used in ultrafast short pulse generators, but the research on ultrafast gate drive of SiC MOSFET under transient strong field is very scarce
Due to the particularity of pulse generator applications, the improvement of SiC MOSFET dynamic parameters through high-current gate drive has become the main bottleneck in the development of ultra-fast short pulse generators with MHz repetition rates.

Method used

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  • High-current driving device for SiC MOSFET in pulse power application
  • High-current driving device for SiC MOSFET in pulse power application
  • High-current driving device for SiC MOSFET in pulse power application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] see figure 1 and figure 2 , a high-current drive device for SiC MOSFETs in pulsed power applications, the circuit structure is shown below:

[0047] Upper arm inductance L dr_h Connect the high-side drain parasitic inductance L Hd.int .

[0048] The high-side drain parasitic inductance L Hd.int The drain of the switch tube Q1 is connected in series.

[0049] The gate of the switching transistor Q1 is suspended. The source of the switching tube Q1 is connected in series with the parasitic inductance L of the source of the upper bridge arm Hs.int one end.

[0050] Upper arm source parasitic inductance L Hs.int The other end of the series gate inductance L g .

[0051] Upper arm source parasitic inductance L Hs.int The other end of the lower bridge arm drain parasitic inductance L in series Ld.int Then connect the drain of the switching tube Q2.

[0052] The gate of the switching transistor Q2 is suspended. The source of the switching tube Q2 is connected in...

Embodiment 2

[0066] A circuit structure using a high current driver for SiC MOSFETs in pulsed power applications, the circuit structure is as follows:

[0067] High side drain parasitic inductance L Hd.int Send drive positive voltage to MOSFET module.

[0068] The half-bridge gate driver sends a driving positive voltage to the MOSFET module through the upper arm inductor Ldr_h.

[0069] The high-side drain parasitic inductance L Hd.int The drain of the switch tube Q1 is connected in series.

[0070] The gate of the switching transistor Q1 is suspended. The source of the switching tube Q1 is sequentially connected in series with the parasitic inductance L of the source of the upper bridge arm Hs.int , The parasitic inductance of the drain of the lower bridge arm L Ld.int Then connect the drain of the switching tube Q2.

[0071] The gate of the switching transistor Q2 is suspended. The source of the switching tube Q2 is connected in series with the parasitic inductance L of the source...

Embodiment 3

[0086] see figure 1 and figure 2 , a high-current drive device and test unit for SiC MOSFETs in pulsed power applications, including GaNHEMTGateDriver, MOSFET, and Load, where L Hd.int , L Hs.int , L Ld.int , L Ls.int are the drain and source parasitic inductance of the upper bridge arm and the drain and source parasitic inductance of the lower bridge arm of the GaN HEMT half-bridge module, respectively. while L dr_h , L dr_s and L· are the upper arm inductance, lower arm inductance and grid inductance introduced by the drive circuit design.

[0087] In the application of nanosecond pulse generator, in order to make the SiC MOSFET have a faster voltage front, the distance between the driver IC and the gate of the SiC MOSFET is often shortened as much as possible. Therefore, the circuit proposed by the present invention does not involve conventional drive devices such as additional drive resistors and turn-off resistors. The parasitic inductance is the main factor affe...

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Abstract

The invention discloses a high-current driving device for a SiC MOSFET in pulse power application. The circuit structure is characterized in that an upper arm inductor Ldr_h is connected with an upper bridge arm drain parasitic inductor LHd.int; the upper bridge arm drain parasitic inductor LHd.int is connected in series with the drain of a switching transistor Q1; the gate of the switching transistor Q1 is suspended; the source of the switching transistor Q1 is connected in series with one end of an upper bridge arm source parasitic inductor LHs.int; the other end of the upper bridge arm source parasitic inductor LHs.int is connected in series with a gate inductor Lg; the other end of the upper bridge arm source parasitic inductor LHs.int is connected in series with a lower bridge arm drain parasitic inductor LLd.int and then is connected with the drain of a switching transistor Q2; the gate of the switching transistor Q2 is suspended; the source of the switching transistor Q2 is connected in series with the lower bridge arm source electrode parasitic inductor LLs.int; and the lower bridge arm source parasitic inductor LLs.int is connected with a lower arm inductor Ldr_s. The invention is suitable for the pulse power system using the SiC MOSFET as a main switch.

Description

technical field [0001] The invention relates to the field of pulses, in particular to a high-current drive device for SiC MOSFETs in pulse power applications. Background technique [0002] The ultrafast frontier short pulse generator is a key technology in the research of high energy physics and biological electromagnetic effects. SiC MOSFET is the main switch commonly used in ultrafast short pulse generators, but the research on ultrafast gate drive of SiC MOSFET under transient strong field is very scarce. Due to the particularity of pulse generator applications, the improvement of SiC MOSFET dynamic parameters through high-current gate drive has become the main bottleneck in the development of ultra-fast short pulse generators with MHz repetition rates. Contents of the invention [0003] The object of the present invention is to provide a high current driving device for SiC MOSFET in pulse power application, the circuit structure is as follows: [0004] Upper arm indu...

Claims

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Application Information

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IPC IPC(8): H03K17/687
CPCH03K17/687Y02B70/10
Inventor 余亮马剑豪姚陈果董守龙谯雪王丽丽
Owner CHONGQING UNIV