Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Vacuum distillation device for indium and distillation method thereof

The technology of a distillation device and a distillation method is applied in the directions of vacuum distillation and process efficiency improvement, etc., and can solve problems such as difficulty in continuous and efficient purification and the like

Active Publication Date: 2021-09-10
SHANGHAI UNIV +1
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problem that the existing indium distillation purification device is difficult to achieve continuous and efficient purification of indium, the present invention provides a vacuum distillation device for indium, which can purify only On the basis of a small amount of metal indium liquid, there is no need to frequently add indium liquid to the container to achieve efficient and continuous distillation and purification of indium

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum distillation device for indium and distillation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0035] A vacuum distillation device for indium, mainly used for distillation and purification of metal indium, but it should be noted that this device is only more suitable for distillation and purification of metal indium, it does not mean that the device can only be used for the purification of indium , which can also be used for the purification of other types of molten metal. The specific structure and working principle of the device will be described in detail below.

[0036] Such as figure 1 As shown, the distillation device includes an upper distillation unit, a lower distillation unit and a liquid riser 3 connecting the two distillation units. Wherein, the upper distillation unit includes an upper vacuum chamber 1, in which a crucible 11 and an upper heating device 12 for heating the crucible 11 are arranged, and an upper condensing device 13 is arranged in the upper end of the crucible 11.

[0037] The lower distillation unit is located below the upper vacuum chambe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vacuum distillation device for indium and a distillation method thereof, and belongs to the field of metal purification. The device comprises an upper vacuum chamber, a container and a riser tube, a crucible and an upper heating device used for heating the crucible are arranged in the upper vacuum chamber, an upper condensing device is arranged at the upper end in the crucible, the container is arranged below the upper vacuum chamber and provided with an air inlet, the air inlet is externally connected with an air inlet device, the lower end face of the crucible is a conical surface, and two ends of the riser tube are respectively communicated with the crucible and the container. According to the method, the distillation device is adopted, the metal indium liquid can be continuously and efficiently purified, and the indium purification efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of metal purification, and more specifically relates to a vacuum distillation device and a distillation method for indium. Background technique [0002] As a rare and precious metal, indium is widely used in the electronics and semiconductor industries for its excellent physical, chemical and mechanical properties. However, the electronics industry and the semiconductor industry have extremely high requirements on the purity of the raw material indium metal, and the introduction of trace impurities will seriously affect the performance of the final device material itself. At present, the main preparation methods of high-purity indium include electrolysis, vacuum distillation, regional smelting, metal-organic compound method, and low-halogen compound method. Due to their unique advantages, these methods have their own suitable application scenarios. In actual production, multiple methods are often combined ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01D3/10C22B9/02C22B9/04C22B58/00
CPCB01D3/10C22B9/02C22B9/04C22B58/00Y02P10/20
Inventor 文家俊伍美珍郑红星彭巨擘张云虎张家涛贾元伟陈丽诗
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com