Method for forming barrier layer and method for manufacturing semiconductor device

Abstract

Provided is a method for forming a barrier layer by which even when a base layer has a three-dimensional structure with a high aspect ratio, a dopant can be uniformly distributed in the base layer. In the method for forming a barrier layer, the barrier layer is formed on a base layer having a three-dimensional structure before a dopant-containing layer is formed on the base layer. At this time, at least one of a film thickness, a film quality, and a film type of the barrier layer is controlled in a height direction of the three-dimensional structure by using an atomic layer deposition (ALD) process.

Description

Technical field [0001] The present invention relates to a barrier layer forming method and a method of manufacturing the semiconductor device, and more particularly to a barrier layer forming method for doping with a substrate layer in a manufacturing step of a semiconductor device such as a FinFET. Background technique [0002] Conventionally, with high concentration of the semiconductor chip, planar transistors such as MOSFET gradually fine, high speed, and low power consumption. However, in the conventional planar transistor, the so-called short channel effect cannot be suppressed by a gate voltage to perform control, so that the finelation of the planar transistor is extremely low. Thus, the development of three-dimensional transistors that is actively carried out with a fin field effect transistor (hereinafter also referred to as FinFET). [0003] The three-dimensional transistor has a stereoscopic configuration of the gate electrode surrounding the channel portion, thereby ...

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Problems solved by technology

As a result, there is a problem that the distribution of dopants in the base layer 100 after drive-in becomes uneven in the height direction of the base layer.

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