Unlock instant, AI-driven research and patent intelligence for your innovation.

Flash memory data rereading method and device and computer readable storage medium

A storage medium and computer technology, applied in computing, electrical digital data processing, error detection of redundant data in operations, etc., can solve problems such as affecting the accuracy of reread data, and achieve the effect of improving accuracy

Pending Publication Date: 2021-11-16
深圳市宏旺微电子有限公司
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to at least solve one of the technical problems in the prior art, and provide a flash memory data rereading method, which can solve the problem that high temperature affects the accuracy of rereading data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory data rereading method and device and computer readable storage medium
  • Flash memory data rereading method and device and computer readable storage medium
  • Flash memory data rereading method and device and computer readable storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the examples of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts still fall within the protection scope of the present invention.

[0034] In the prior art, a temperature sensor is used to measure the overall temperature of the storage device 100, and the overall temperature of the storage device 100 is used as the basis for cooling down. The temperature of the floating gate corresponding to the reread data cannot be accurately measured by the above-mentioned prior art. . For example, if figure 1 As shown, in the prior art, when the temperature sensor is used to measure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory data rereading method and device and a computer readable storage medium, and the method comprises the step of executing a new round of rereading processing at a preset time interval after the current rereading processing fails. According to the invention, a new round of rereading processing is executed after the preset time interval, so that the physical position can be cooled without accurately knowing the physical position of the floating gate corresponding to the to-be-reread data and accurately measuring the temperature of the position, thereby improving the accuracy of the reread data.

Description

technical field [0001] The invention relates to the technical field of flash memory rereading, in particular to a flash memory data rereading method, device and computer-readable storage medium. Background technique [0002] Nand flash (flash memory) is a storage product widely used today, with excellent characteristics such as fast speed and non-volatile. It actually represents data in the form of stored charges. In actual use, changes in various internal and external conditions will cause changes in the amount of stored charges. If this change accumulates to a certain extent, the default read operation will When accessing Nand flash, it is very likely that the correct data cannot be obtained. Generally speaking, manufacturers of Nand flash will allow the adjustment of the read voltage used to determine the state of the flash memory cells, and the data can be recovered correctly by adjusting the read voltage. Usually, this process is called rereading. [0003] The rise of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/14
CPCG06F11/1402
Inventor 杨慧玲朱钦床陈宗廷李斌
Owner 深圳市宏旺微电子有限公司