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Fault detection method and device for semiconductor process

A fault detection and semiconductor technology, which is applied in the direction of single semiconductor device testing, measuring devices, measuring electronics, etc., can solve the problems of complex multi-dimensional process data structure, inability to deal with complex abnormal performance of multi-dimensional data, etc., and achieve online fault detection Effect

Pending Publication Date: 2021-11-30
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in the complex semiconductor process flow, the performance indicators will be affected by many factors, so the multi-dimensional process data obtained through a large number of sensors has a complex structure
However, the existing data analysis methods mainly monitor a single parameter as a whole, and cannot deal with the compound abnormal performance of multi-dimensional data

Method used

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  • Fault detection method and device for semiconductor process
  • Fault detection method and device for semiconductor process
  • Fault detection method and device for semiconductor process

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Embodiment Construction

[0028] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0029] In the drawings, the size, dimensions, and shapes of elements have been slightly adjusted for illustrative purposes. The drawings are examples only and are not strictly drawn to scale. In addition, in the present application, the order of description of the processing of each step does not necessarily indicate the order in which these processes appear in actual operation, unless there is a clear other limitation or can be d...

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PUM

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Abstract

The invention discloses a fault detection method, device and system for a semiconductor process and a computer readable storage medium. The fault detection method comprises the following steps: acquiring an original data set representing a normal process state in a preset time period; performing decorrelation processing on the original data set to reduce the dimension of the original data set and remove redundant information; determining an index parameter set associated with the product process data based on the decorrelated data set; calculating a threshold value of the index parameter set according to a preset fault judgment accuracy rate; acquiring to-be-detected data in the technological process and calculating an index parameter set of the to-be-detected data; and in response to the fact that the index parameter set corresponding to the to-be-detected data exceeds the threshold value, identifying that the technological process has a fault.

Description

technical field [0001] The present application relates to the field of semiconductor devices, and more particularly, to a method for fault monitoring and detection of a semiconductor process. Background technique [0002] In the semiconductor process flow, the process data detected by the detection device can be used to directly feed back the process parameters of the product, but these parameters usually have a hysteresis and cannot realize real-time detection of the process flow. On the contrary, sensors can collect data in the process in real time. Therefore, the data collected by the sensor can be used to reflect the process data, so as to realize online real-time fault detection. [0003] At present, in the complex semiconductor process flow, the indicators for measuring performance will be affected by many factors, so the multi-dimensional process data obtained through a large number of sensors has a complex structure. However, the existing data analysis methods main...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01D21/02G06K9/62
CPCG01R31/2601G01D21/02G06F18/24
Inventor 万星星潘晓东
Owner YANGTZE MEMORY TECH CO LTD
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