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Bias circuit

A technology of bias circuit and resistance, which is applied in the direction of electrical components, adjusting electrical variables, improving amplifiers to reduce temperature/power supply voltage changes, etc., and can solve problems such as bias voltage dependence and variation

Active Publication Date: 2021-11-30
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when using resistors, there is a problem that the bias voltage varies depending on the power supply voltage

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0028] First, before describing the bias circuit according to the embodiment, the bias circuit according to the comparative example will be described.

[0029] figure 1 It is a circuit configuration diagram showing an example of a bias circuit 100 according to a comparative example. In addition, the bias circuit according to the embodiment partially has the same circuit configuration as the bias circuit 100 according to the comparative example, and detailed description of each component included in the bias circuit 100 will be omitted here.

[0030] In the bias circuit 100 according to the comparative example, instead of a current source using a P-channel transistor or a depletion FET, the resistor R1 is used to reduce the cost of the bias circuit 100 . A current corresponding to the power supply voltage supplied from the terminal 11 can flow through the resistor R1, so the resistor R1 can be used instead of the current source. However, for example, when the power supply vol...

Deformed example 1

[0074] Next, a bias circuit according to Modification 1 will be described.

[0075] Figure 5 It is a circuit configuration diagram showing an example of a bias circuit 10a according to Modification 1.

[0076] The bias circuit 10a according to Modification 1 is different from the bias circuit 10 according to the embodiment in that the transistor Tr1 is an FET (specifically, an enhancement type FET). Other points are the same as those of the bias circuit 10 according to the embodiment, and therefore description thereof will be omitted.

[0077] Since the transistor Tr1 is an FET, the bias circuit 10a can supply a stable bias voltage compared to the case where the transistor Tr1 is a bipolar transistor. This is because the voltage drop between the gate and source of a FET is less dependent on temperature than a bipolar transistor. In addition, since the amount of voltage drop between the gate and the source of the transistor Tr1 is smaller than that of a bipolar transistor, ...

Deformed example 2

[0079] Next, a bias circuit according to Modification 2 will be described.

[0080] Image 6 It is a circuit configuration diagram showing an example of a bias circuit 10b according to Modification 2.

[0081] The bias circuit 10b according to Modification 2 differs from the bias circuit 10a according to Modification 1 in that it further includes a resistor R6, and the first terminal of the transistor Tr1, the fifth terminal of the transistor Tr2, and the other end of the resistor R1 are connected to each other. , and connected to terminal 12 (specifically, the first terminal of transistor Tr1 and the other end of resistor R1 are connected to terminal 12 via resistor R6), the third terminal of transistor Tr1, one end of resistor R2 and one end of resistor R3 are connected to each other. Other points are the same as those in the bias circuit 10 a according to Modification 1, and thus description thereof will be omitted. In addition, the load current flowing through the load 2...

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PUM

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Abstract

The invention provides a bias circuit capable of supplying a stable bias voltage independent of a power supply voltage. The present invention is provided with transistors (Tr1, Tr2, Tr3, Tr4, Tr5, and Tr6) and resistors (R1, R2, R3, R4, and R5), the collector of the transistor (Tr5) being connected to a node (N1) on a path connecting the collector of the transistor (Tr4) and the other end of the resistor (R3), and the collector of the transistor (Tr6) being connected to the other end of the resistor (R5).

Description

technical field [0001] The present invention relates to a bias circuit for supplying a bias voltage. Background technique [0002] Conventionally, a circuit for generating a predetermined bias voltage using a bandgap has been disclosed (for example, Patent Document 1). This circuit is called a Widlar-type bandgap reference circuit, in which the positive temperature coefficient of resistance is used to cancel the negative temperature coefficient depending on the transistor configuration, so that a constant bias voltage can be generated even if the temperature changes . [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Japanese Patent Application Laid-Open No. 8-139587 [0006] In the circuit disclosed in the aforementioned Patent Document 1, a current source using a P-channel transistor or a depletion FET (Field Effect Transistor, Field Effect Transistor) is required, and there is a problem in terms of cost. Therefore, consider using a r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567H03F1/30H03F2200/447H03F3/21
Inventor 山城英世
Owner MURATA MFG CO LTD
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