35results about How to "Stable bias voltage" patented technology

A sensor array includes a plurality of pixel sensor circuits; and a current-mode readout circuit to sample signals generated in each pixel sensor circuit; and addressing circuitry to individually select each pixel sensor circuit. Each pixel sensor circuit includes: a transducer and an amplifying element coupled to the transducer and configured to output a signal current which varies as a function of a measured physical property. The current-mode readout circuit includes: a sense signal line coupled to each of the amplifying elements in order to monitor the voltage presented across the amplifying element of the selected pixel sensor circuit; a drive signal line coupled to an output of each of the amplifying elements in order to provide a constant bias voltage to the amplifying element of the selected pixel sensor circuit; and a current conveyor circuit coupled to the sense signal line and drive signal line.

A high-speed BDI-type pixel unit circuit comprises an input amplifier, a detector bias reset circuit, an injection pipe, an integration/reset control circuit, a sample hold circuit and a transmission circuit, wherein the input amplifier, the detector bias reset circuit, the injection pipe, the integration/reset control circuit, the sample hold circuit and the transmission circuit are connected in sequence. A difference amplifier with a current mirror serving as a load is adopted by the input amplifier, a detector bias voltage is rapidly reset to be in a stable state by the detector bias reset circuit in a reset state, the injection pipe forms a negative feedback mode, integration is conducted on an output signal of the infrared detector in the integration state of the integration/reset control circuit, and an integration capacitor is reset in the reset state. The sample hold circuit is used for collecting and holding integration voltages and the transmission circuit is used for receiving output of the sample hold circuit.

A cascode current mirror circuit is connected as an active load to the input differential pair. A tail current source supplies a tail current to the input differential pair. A constant current source is connected in parallel with the input differential pair, and supplies a constant current to the tail current source. The constant current supplied by the constant current source is set to a value at which a transistor is not cut off.

The invention relates to a circuit structure for driving a silicon-based avalanche photodiode, which includes a photovoltaic diode array, a silicon-based avalanche photodiode, a charge and discharge management circuit, a field effect transistor, a high-voltage bias circuit and a bias voltage setting circuit; The two ends of the input end of the charging and discharging management circuit are connected to the positive and negative poles of the photovoltaic diode array; the two ends of the output end of the charging and discharging management circuit are connected to the gate and source of the field effect transistor; The drains of the effect transistors are connected; the output end of the high-voltage bias circuit is connected with the cathode of the silicon-based avalanche photodiode, and the output end of the bias voltage setting circuit is connected with the input end of the high-voltage bias circuit; the beneficial effects of the present invention are: the The response speed of the circuit structure is fast, the dark current is extremely low when there is no light, the light-current gain is high, the control circuit has a good isolation effect, the circuit power consumption is low, and the circuit structure is relatively simple.

A bias circuit supplies bias voltage to a linear detector circuit. The bias circuit includes a transistor including a collector terminal, an emitter terminal, and a base terminal; a resistance element having one end connected to the collector terminal and the other end connected to a power line and the base terminal; a resistance element having one end connected to the emitter terminal; a transistor that switches between connection and disconnection between the resistance element and ground; collector voltage extended lines that transmit voltage corresponding to collector voltage as the bias voltage; and a transistor that is arranged on a path of one of the collector voltage extended lines and that switches between connection and disconnection between an output terminal of the linear detector circuit and the collector terminal.

The invention discloses a step-down voltage dividing bias circuit based on an in-well high-voltage high-precision polycrystalline resistor. The bias circuit includes two high-voltage-resistance high-precision polycrystalline resistor voltage dividing circuits, voltage self-bias circuits, bipolar composite triodes, series connection voltage dividing triodes, a series connection resistor voltage dividing circuit and a current bias circuit. The two high-voltage-resistance high-precision polycrystalline resistor voltage dividing circuits are in series connection, and are used for obtaining high voltage from a high-voltage port VDD, and obtaining sampling voltage VK after voltage dividing and step-down; stable voltage VQ is generated after the sampling voltage VK passes through the voltage self-bias circuits for voltage regulation; constant low-voltage bias voltage VCC is output after the stable voltage VQ passes through the bipolar composite triodes and the series connection voltage dividing triodes for voltage step-down and fine-adjustment; reference voltage VREF of various values is obtained after the constant bias voltage VCC passes through the series connection resistor voltage dividing circuit for voltage dividing; and at the same time, the current bias circuit utilizes the constant bias voltage VCC to produce multiple stable bias currents IBAS. An entire bias circuit networkincreases a circuit integration degree, reduces a chip area, and reduces costs.

The invention provides a biasing circuit of a power amplifier. The biasing circuit at least comprises a voltage generating module and a direct current biasing buffer outputting module, wherein the voltage generating module is connected with an external biasing voltage and used for processing the external biasing voltage to output stable voltage output, and the direct current biasing buffer outputting module is connected to an output end of the voltage generating module and used for outputting the stable voltage to the power amplifier through an emitter-follower in a manner of direct current buffer and providing a larger current to the power amplifier. The biasing circuit not only can provide the stable biasing voltage to the power amplifier so as to inhibit the biasing current of the power amplifier from changing greatly with temperature, but also can provide larger biasing current to the power amplifier so as to better meet the requirement of the power amplifier.

The invention relates to an MEMS microphone biasing circuit which is characterized by comprising an oscillator, a clock amplitude adjusting module, a reference voltage module and a charge pump set, the output end of the oscillator is connected with the input end of the clock amplitude adjusting module, and the oscillator is used for sending a clock signal to the clock amplitude adjusting module; the output end of the clock amplitude adjusting module is connected with the charge pump set, and the clock amplitude adjusting module is used for adjusting the amplitude of the clock signal; the reference voltage module is connected with the charge pump set and used for providing input voltage for operation of the charge pump set. The charge pump set comprises a preceding-stage charge pump and an output-stage charge pump, the preceding-stage charge pump is located at the input end of the charge pump set, the output-stage charge pump is located at the output end of the charge pump set, and the charge pump set is used for outputting bias voltage to be processed. And stable bias voltage can be output, so that the MEMS microphone has good sensitivity.

An amplifier circuit includes a first transistor, a second transistor, a first pathway and a second pathway. The first transistor amplifies an external signal that is input from outside the amplifier circuit. The second transistor amplifies a detection signal that detects a level of the external signal. The first pathway is connected between a collector of the first transistor and a base of the second transistor to supply the detection signal that is output from the collector of the first transistor to the base of the second transistor. The second pathway is connected between an emitter of the first transistor and the base of the second transistor to supply a bias voltage from the emitter of the first transistor to the base of the second transistor.