A circuit structure for lcd driving bias voltage

Abstract

The invention discloses a circuit structure for LCD driving bias voltage, comprising resistor R1, resistor R2, resistor R3, a first NMOS transistor, a second NMOS transistor, a PMOS transistor and a transmission gate TG. The output ends of the resistor R1 are respectively It is connected to one end of the transmission gate TG, the input end of the resistor R2 and the input end of the first NMOS tube, and the output end of the resistor R2 is respectively connected to the other end of the transmission gate TG, the input end of the resistor R3 and the input end of the PMOS tube. The output end of R3 is connected to the input end of the second NMOS transistor. By adopting NMOS tube and PMOS tube, the present invention has stable bias voltage, good effect, simple structure, high circuit integration, small occupied chip area and low cost.

Description

technical field [0001] The invention relates to the technical field of integrated circuit structures, in particular to a circuit structure for LCD driving bias voltage. Background technique [0002] The bias voltage circuit used for LCD driving in traditional integrated circuits usually adopts aluminum gate technology, and the plate capacitor composed of aluminum layer and N+ or P+ does not need to add additional masks. With the improvement of integrated circuit integration, The aluminum gate process has no advantage in cost. In the silicon gate process, an additional mask is required to fabricate a plate capacitor (a plate capacitor composed of polycrystalline and N+ or P+), thereby increasing the cost. The above shortcomings are worth solving. SUMMARY OF THE INVENTION [0003] In order to overcome the deficiencies of the prior art, the present invention provides a circuit structure for LCD driving bias voltage. [0004] The technical scheme of the present invention is ...

AI Technical Summary

Problems solved by technology

[0002] The bias voltage circuit used for LCD driving in traditional integrated circuits usually adopts aluminum gate technology, and the plate capacitor composed of aluminum layer and N+ or P+ does not need to add additional masks. With the improvement of integrated circuit integration, The aluminum gate process has no advantage in cost. In the silicon gate process, an additional photomask is required to make a plate capacitor (a plate capacitor composed of polycrystalline and N+ or P+), which increases the cost.

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