APD bias control circuit, photoelectric receiving circuit and bias control method

Abstract

The invention provides an APD bias control circuit, a photoelectric receiving circuit and a bias control method. The APD bias control circuit comprises a bias regulation unit and a plurality of bias controllers, wherein the bias regulation unit is used for generating a supply voltage control signal and a bias control signal of each APD according to overvoltage state indication information and undervoltage state indication information transmitted by each bias controller; the plurality of bias controllers are connected with the plurality of APDs, used for receiving light current strength voltage signals corresponding to light current signals passing through the APDs connected with the bias controllers, and generating load voltage of the APDs connected with the bias controllers according to current supply voltage, the light current strength voltage signal and the bias control signal of a power module. According to the technical scheme of the circuits and method provided by the invention, the characteristics of few circuit element, low overall circuit power consumption and small wiring space occupied by circuit elements are achieved, and the requirement of miniaturization of the circuits is met, while multi-channel low power consumption APD bias control is achieved.

Description

technical field [0001] The invention relates to the field of optical technology, in particular to an APD bias voltage control circuit, a photoelectric receiving circuit and an APD bias voltage control method. Background technique [0002] APD (Avalanche Photo Diode, avalanche photodiode) has been widely used in light detection and other technologies due to its high sensitivity, fast response speed and wide frequency bandwidth. [0003] During the working process of the APD, it is usually necessary to use the APD bias voltage control circuit to control the reverse bias voltage applied to the APD, so that when the APD receives light, the APD will generate electrons under the action of the reverse bias voltage. The electron-hole pair will be collected by an external electric field and converted into a current, and the intensity of the converted current is usually proportional to the intensity of the light. In addition, the APD bias control circuit can also provide overload pro...

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Problems solved by technology

[0004] The inventor found in the process of realizing the present invention that a multi-channel high-speed photoelectric receiving circuit based on multiple APDs has been proposed at present, such as the multi-channel optical transmission link of IEEE 100G ER4 40km disclosed in IEEE802.3ba-2010; The APD bias control circuit can not provide bias voltage and overload protection for multiple APDs at the same time. Therefore, when it is necessary to provide bias voltage and overload protection for multiple APDs in the multi-channel photoelectric receiving circuit The characteristic parameters of each APD (such as the reverse breakdown voltage Vbr) configure a set of APD bias control circuits for each APD, which will not only increase the total power consumption of the photoelectric receiving circuit to a large extent, but also due to Due to factors such as the increase in the number of circuit components required by the photoelectric receiving circuit and the large wiring space occupied by the circuit components, the photoelectric receiving circuit cannot meet the requirements of circuit miniaturization.

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