High-speed BDI-type pixel unit circuit

A pixel unit and circuit technology, which is applied in the field of optoelectronics and microelectronics, can solve the problem of long-time detectors, etc., and achieve the effects of reducing circuit power consumption, fast and stable, and increasing speed

Inactive Publication Date: 2014-09-24
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the pixel unit circuit is working, it takes a long time for the detector bias to stabilize during the reset phase.

Method used

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  • High-speed BDI-type pixel unit circuit
  • High-speed BDI-type pixel unit circuit

Examples

Experimental program
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Embodiment Construction

[0017] Such as figure 1 As shown, the input amplifier 1 adopts a differential amplifier with a current mirror as a load, including NMOS transistors M1, M2, M5 and PMOS transistors M3, M4. In the reset state, reset the infrared detector to a stable bias voltage; in the integral state, provide a stable bias voltage to the detector. The gate of the NMOS transistor M2 receives the output signal of the infrared detector.

[0018] The detector bias voltage reset circuit 2 is composed of NMOS transistor M6, which resets the detector bias voltage to a stable state very quickly in the reset state, so as to improve the reset speed of the circuit to the detector bias voltage.

[0019] The injection tube 3 is an NMOS tube M7, which constitutes a form of negative feedback, and provides a stable bias voltage for the infrared detector in the integral state.

[0020] Integral / reset control circuit 4 includes NMOS tube M8 and capacitor C1, and the circuit works in the integral or reset state...

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PUM

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Abstract

A high-speed BDI-type pixel unit circuit comprises an input amplifier, a detector bias reset circuit, an injection pipe, an integration/reset control circuit, a sample hold circuit and a transmission circuit, wherein the input amplifier, the detector bias reset circuit, the injection pipe, the integration/reset control circuit, the sample hold circuit and the transmission circuit are connected in sequence. A difference amplifier with a current mirror serving as a load is adopted by the input amplifier, a detector bias voltage is rapidly reset to be in a stable state by the detector bias reset circuit in a reset state, the injection pipe forms a negative feedback mode, integration is conducted on an output signal of the infrared detector in the integration state of the integration/reset control circuit, and an integration capacitor is reset in the reset state. The sample hold circuit is used for collecting and holding integration voltages and the transmission circuit is used for receiving output of the sample hold circuit.

Description

technical field [0001] The invention relates to a pixel unit circuit, which is a core circuit in an infrared focal plane readout circuit, in particular to a high-speed BDI type pixel unit circuit, which belongs to the field of optoelectronic technology and microelectronic technology. Background technique [0002] Infrared imaging technology is being increasingly widely used in military, space technology, medicine and related fields of national economy. The infrared focal plane array component is the core optoelectronic device for obtaining infrared image signals in infrared imaging technology. The component consists of an infrared detector and an infrared focal plane readout circuit (ROIC: readout integrated circuits). The ROIC circuit is a highly integrated circuit that integrates the functions of the focal plane into a single semiconductor chip. Its basic function is to convert, amplify, and transmit infrared detection signals, that is, to transmit data from many detector...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/33H04N5/378
Inventor 孙伟锋苏军朱长峰刘金岑徐申陆生礼时龙兴
Owner SOUTHEAST UNIV
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