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Deep ultraviolet led chip and its manufacturing method

A technology of LED chip and manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of increasing the contact area, reducing the probability of total reflection, and reducing the steady-state voltage

Active Publication Date: 2022-02-11
ZHIXIN SEMICON (HANGZHOU) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The luminous wavelength of the deep ultraviolet LED with AlGaN material as the active region can cover the ultraviolet band of 210-365nm. The luminous efficiency of LED is about half lower than that of products using blue LEDs, so brightness has become a major issue for UV LEDs

Method used

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  • Deep ultraviolet led chip and its manufacturing method
  • Deep ultraviolet led chip and its manufacturing method
  • Deep ultraviolet led chip and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This embodiment provides a deep ultraviolet LED chip, such as figure 1 is a cross-sectional view of the growth substrate and the epitaxial layer in the deep ultraviolet LED chip, figure 2 is a cross-sectional view of a deep ultraviolet LED chip, image 3 It is a top view of a deep ultraviolet LED chip, including: a growth substrate and an epitaxial layer formed on the growth substrate, and the epitaxial layer includes an N-type semiconductor layer, a barrier layer 4, a light-emitting layer and a P-type semiconductor layer formed on the growth substrate in sequence A step can be formed between the side of the P-type semiconductor layer away from the growth substrate and the side of the N-type semiconductor layer away from the growth substrate, the side of the P-type semiconductor layer away from the growth substrate is the upper step surface, and the side of the N-type semiconductor layer away from the growth One side of the substrate is the lower step surface, and the...

Embodiment 2

[0037] This embodiment provides a method for manufacturing the deep ultraviolet LED chip in Embodiment 1, including:

[0038] Step 1: forming an epitaxial layer on the growth substrate, the epitaxial layer includes an N-type semiconductor layer, a barrier layer 4, a light-emitting layer and a P-type semiconductor layer sequentially formed on the growth substrate;

[0039] Step 2: Deposit SiO on the surface of the P-type semiconductor layer away from the growth substrate 2 Protective layer, photolithography to do MESA pattern after coating positive resist, remove excess SiO by wet method 2 part, forming SiO 2 MESA graphics;

[0040] Step 3: Etching the epitaxial layer to the N-type semiconductor layer, forming the side of the step with an angle θ between the inclined surface and the horizontal plane, removing the photoresist, and the angle θ is 30-45 degrees;

[0041] Step 4: Change the etching gas and power ratio to perform secondary etching on the side between the light-em...

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Abstract

The invention provides a deep ultraviolet LED chip, which relates to the technical field of LED chip production, comprising: a growth substrate and an epitaxial layer formed on the growth substrate, a side of the P-type semiconductor layer away from the growth substrate and an N-type semiconductor layer away from the growth A step can be formed between the surfaces of the substrate, the surface of the P-type semiconductor layer away from the growth substrate is the upper step surface, and the surface of the N-type semiconductor layer far away from the growth substrate is the lower step surface, connecting the upper step surface and the lower step surface The side of the step is the side of the step, the side of the step includes the side of the barrier layer, the side of the light-emitting layer and the side of the P-type semiconductor layer, the side of the P-type semiconductor layer and the light-emitting layer form the upper side, the side of the barrier layer forms the lower side, and the upper side and The angle between the horizontal planes is smaller than the angle between the lower side and the horizontal plane; the present invention also provides a method for manufacturing a deep ultraviolet LED chip as described above; the scheme provided by the present invention improves the light extraction efficiency and can reduce the steady state voltage.

Description

technical field [0001] The invention relates to the technical field of manufacturing LED chips, in particular to a deep ultraviolet LED chip and a manufacturing method thereof. Background technique [0002] Ultraviolet LEDs (UV LEDs) are mainly used in biomedicine, anti-counterfeiting identification, purification (water, air, etc.), computer data storage, and military affairs. And with the development of technology, new applications will continue to appear to replace the original technology and products, ultraviolet LED has a broad market application prospect, semiconductor deep ultraviolet light source in lighting, sterilization, medical treatment, printing, biochemical detection, high density It has great application value in the fields of information storage and confidential communication. The luminous wavelength of the deep ultraviolet LED with AlGaN material as the active region can cover the ultraviolet band of 210-365nm. The luminous efficiency of LEDs is about half...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/24H01L33/38H01L33/00
CPCH01L33/20H01L33/24H01L33/38H01L33/007
Inventor 不公告发明人
Owner ZHIXIN SEMICON (HANGZHOU) CO LTD