Unlock instant, AI-driven research and patent intelligence for your innovation.

Deep ultraviolet LED chip and manufacturing method thereof

A technology of LED chips and manufacturing methods, which are applied in the directions of electrical components, circuits, semiconductor devices, etc., to achieve the effects of reducing the probability of total reflection, improving light extraction efficiency, and reducing steady-state voltage

Active Publication Date: 2021-12-03
ZHIXIN SEMICON (HANGZHOU) CO LTD +1
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The luminous wavelength of the deep ultraviolet LED with AlGaN material as the active region can cover the ultraviolet band of 210-365nm. The luminous efficiency of LED is about half lower than that of products using blue LEDs, so brightness has become a major issue for UV LEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep ultraviolet LED chip and manufacturing method thereof
  • Deep ultraviolet LED chip and manufacturing method thereof
  • Deep ultraviolet LED chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This embodiment provides a deep ultraviolet LED chip, such as figure 1 is a cross-sectional view of the growth substrate and the epitaxial layer in the deep ultraviolet LED chip, figure 2 is a cross-sectional view of a deep ultraviolet LED chip, image 3 It is a top view of a deep ultraviolet LED chip, including: a growth substrate and an epitaxial layer formed on the growth substrate, and the epitaxial layer includes an N-type semiconductor layer, a barrier layer 4, a light-emitting layer and a P-type semiconductor layer formed on the growth substrate in sequence A step can be formed between the side of the P-type semiconductor layer away from the growth substrate and the side of the N-type semiconductor layer away from the growth substrate, the side of the P-type semiconductor layer away from the growth substrate is the upper step surface, and the side of the N-type semiconductor layer away from the growth One side of the substrate is the lower step surface, and the...

Embodiment 2

[0037] This embodiment provides a method for manufacturing the deep ultraviolet LED chip in Embodiment 1, including:

[0038] Step 1: forming an epitaxial layer on the growth substrate, the epitaxial layer includes an N-type semiconductor layer, a barrier layer 4, a light-emitting layer and a P-type semiconductor layer sequentially formed on the growth substrate;

[0039] Step 2: Deposit SIO on the surface of the P-type semiconductor layer away from the growth substrate 2 Protective layer 11, photolithography to make MESA pattern after coating positive resist, and remove excess SIO by wet method 2 part, forming the SIO 2 MESA graphics;

[0040] Step 3: Etching the epitaxial layer to the N-type semiconductor layer, forming the side of the step with an angle θ between the inclined surface and the horizontal plane, removing the photoresist, and the angle θ is 30-45 degrees;

[0041] Step 4: Change the etching gas and power ratio to perform secondary etching on the side between...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a deep ultraviolet LED chip, and relates to the technical field of LED chip manufacturing, the deep ultraviolet LED chip comprises a growth substrate and an epitaxial layer formed on the growth substrate, a step can be formed between one surface, far away from the growth substrate, of a P-type semiconductor layer and one surface, far away from the growth substrate, of an N-type semiconductor layer, the surface, far away from the growth substrate, of the P-type semiconductor layer is an upper step surface, the surface, away from the growth substrate, of the N-type semiconductor layer is a lower step surface, a surface connected between the upper step surface and the lower step surface is a step side surface, the step side surface comprises a side surface of a barrier layer, a side surface of a light-emitting layer and a side surface of the P-type semiconductor layer, the side surfaces of the P-type semiconductor layer and the light-emitting layer form an upper side surface, and the side surface of the barrier layer forms a lower side surface; the included angle between the upper side face and the horizontal plane is smaller than that between the lower side face and the horizontal plane. The invention further provides a manufacturing method of the deep ultraviolet LED chip. According to the scheme provided by the invention, the light extraction efficiency is improved, and the steady-state voltage of the chip can be reduced.

Description

technical field [0001] The invention relates to the technical field of manufacturing LED chips, in particular to a deep ultraviolet LED chip and a manufacturing method thereof. Background technique [0002] Ultraviolet LEDs (UV LEDs) are mainly used in biomedicine, anti-counterfeiting identification, purification (water, air, etc.), computer data storage, and military affairs. And with the development of technology, new applications will continue to appear to replace the original technology and products, ultraviolet LED has a broad market application prospect, semiconductor deep ultraviolet light source in lighting, sterilization, medical treatment, printing, biochemical detection, high density It has great application value in the fields of information storage and confidential communication. The luminous wavelength of the deep ultraviolet LED with AlGaN material as the active region can cover the ultraviolet band of 210-365nm. The luminous efficiency of LEDs is about half...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/24H01L33/38H01L33/00
CPCH01L33/20H01L33/24H01L33/38H01L33/007
Inventor 不公告发明人
Owner ZHIXIN SEMICON (HANGZHOU) CO LTD