Semiconductor device and preparation method of semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device and semiconductor device preparation, can solve problems such as increase in reverse leakage current, decrease in reverse breakdown voltage of semiconductor device, influence of reverse withstand voltage characteristics, etc.
Pending Publication Date: 2021-12-07
ZTE CORP +1
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Problems solved by technology
However, since the FJ appears in both the source region and the terminal region, and the reverse withstand voltage characteristics of the semiconductor device are easily affected by the dopant dose of the terminal region FJ, if the dopant dose of the terminal region FJ deviates, it is easy to cause the semiconductor device The reverse breakdown voltage decreases and the reverse leakage current increases, causing damage to semiconductor devices
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[0042] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application. In the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.
[0043] It should be noted that although a logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in a different order than in the flowchart. The terms "first", "second" and the like in the specification and claims and the above drawings are used to distinguish similar objects, and not necessarily used to describe a specific sequence or sequence.
[0044] When a reverse bias is applied to a sem...
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Abstract
The invention relates to a semiconductor device and a preparation method of the semiconductor device. The method comprises the following steps of respectively forming a first floating region and a second floating region by adopting a patterning process and an ion implantation process, wherein the second floating region at least comprises two sub-regions with different doping concentrations. According to the invention, the influence of the doping dosage of the second floating region on the reverse voltage withstanding characteristic of the semiconductor device can be effectively reduced when the second floating region is of a continuous structure, and the problem that the semiconductor device is broken down prematurely due to the deviation of the doping dosage of the second floating region, is avoided.
Description
technical field [0001] The embodiments of the present application relate to but are not limited to the field of semiconductor technology, and in particular, relate to a semiconductor device and a method for manufacturing the semiconductor device. Background technique [0002] The floating junction (Floating Junction, FJ) structure is to add one or more discontinuous P-type doping structures to the epitaxial layer of the traditional Schottky diode, similar to the formation of a PN junction structure inside the epitaxial layer. When the semiconductor device works in the reverse state, FJ can change the original single-layer electric field distribution inside the epitaxial layer to the upper and lower double-layer electric field distribution with FJ as the dividing line, thereby increasing the depth and concentration of the epitaxial layer without changing the The reverse breakdown voltage of a semiconductor device. However, since the FJ appears in both the source region and t...
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IPC IPC(8): H01L29/872H01L29/06H01L29/36H01L21/329
CPCH01L29/872H01L29/0615H01L29/0684H01L29/36H01L29/6606
Inventor 袁昊肖莉王梁永宋庆文唐光明汤晓燕
Owner ZTE CORP