Semiconductor process equipment and impedance matching method thereof

Abstract

The embodiment of the invention discloses semiconductor process equipment and an impedance matching method thereof, which are used for solving the problem of low impedance matching efficiency in the existing semiconductor process. The method comprises the following steps of in a process preparation step, acquiring currently stored impedance matching data corresponding to a process build-up step, wherein the impedance matching data comprises a parameter adjusting position corresponding to a parameter adjustable device in an impedance matcher of semiconductor process equipment, and adjusting the parameter adjustable device according to the parameter adjusting position, in a process build-up step, loading radio frequency power to a process chamber of the semiconductor process equipment through an impedance matcher, performing impedance matching through the impedance matcher, and determining a current parameter adjusting position of the parameter adjustable device when the impedance matching is achieved, and updating the impedance matching data according to the current parameter adjusting position. According to the technical scheme, the parameter adjustable device can be accurately and automatically adjusted according to the parameter adjusting position in the impedance matching data, the impedance matching time is shortened, and the impedance matching efficiency is improved.

Description

Technical field [0001] The present application relates to the field of semiconductor technology, and more particularly to a semiconductor process device and its impedance matching method. Background technique [0002] Inductive coupling plasma sources are applied to etching, film deposition, ion implantation, etc. in the semiconductor equipment manufacturing. The plasma reaction chamber has inductive coupling coils and electrostatic chucks, in the etching field, the main principle of the inductive coupling plasma source is: the radio frequency current flows through the inductive coupling coil, thereby generating an electromagnetic field in the reaction chamber, an electromagnetic field exciting the reaction chamber. The access gas generates a plasma, and the bias source control ion bombardment energy allows the plasma to accelerate the silicon sheet to achieve etching. Among them, the silicon wafer is attached to the electrostatic chuck by electrostatic adsorption. [0003] In a ...

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Problems solved by technology

[0005] The purpose of the embodiment of the present application is to provide a semiconductor process equipment and its impedance matching method to solve the problem of low impedance matching efficiency in the existing semiconductor process

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