Piezoelectric substrate structure for filter and preparation method thereof
A substrate structure and filter technology, applied in electrical components, impedance networks, etc., can solve the problems affecting the performance of piezoelectric substrate structures, and achieve the effects of avoiding bubble defects, improving acoustic resistance, and good adsorption.
Active Publication Date: 2022-06-21
JINAN JINGZHENG ELECTRONICS
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Problems solved by technology
[0005] In order to solve the problem that in the prior art, when the piezoelectric substrate structure is prepared by bonding the piezoelectric film layer and the silicon oxide layer, a layer of water film is formed in the bonding surface, thereby affecting the performance of the piezoelectric substrate structure
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[0041] In order for those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
[0042] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present invention.
[0043] figure 1 A schematic structural diagram of a piezoelectric substrate structure for a filter provided by an embodiment of the pres...
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Abstract
A piezoelectric substrate structure for a filter disclosed in an embodiment of the present application and its preparation method include sequentially stacked piezoelectric substrates, a first low acoustic resistance layer, a second low acoustic resistance layer, and a supporting substrate, wherein the first low acoustic resistance layer The acoustic resistance layer is bonded to the surface of the second low acoustic resistance layer after plasma activation. The water molecules between the first low acoustic resistance layer and the second low acoustic resistance layer can diffuse into the first low acoustic resistance layer and the second low acoustic resistance layer, thereby avoiding the generation of water vapor and causing bubble defects in the piezoelectric substrate; In addition, the existence of the first low acoustic resistance layer can effectively block the proton exchange between H in water molecules and Li in the piezoelectric substrate between the first low acoustic resistance layer and the second low acoustic resistance layer, thus ensuring the piezoelectric substrate Original piezoelectric performance; Furthermore, because there is no water film between the piezoelectric substrate and the first low-acoustic resistance layer, so compared with the prior art, the first low-acoustic-resistance layer and the second low-acoustic-resistance layer can also be improved. The acoustic resistance effect of the low acoustic resistance layer reduces the loss of radio frequency signals of the surface acoustic wave filter.
Description
technical field [0001] The present application relates to the field of semiconductor element preparation, in particular to a piezoelectric substrate structure for a filter and a preparation method thereof. Background technique [0002] The surface acoustic wave filter combines low insertion loss and good suppression performance, not only can achieve wide bandwidth, but also its volume is much smaller than traditional filters, which can meet the needs of high integration. In the prior art, the piezoelectric substrate structure used in the surface acoustic wave filter includes, from top to bottom, a piezoelectric thin film layer, a low acoustic resistance layer (generally a silicon oxide layer), and a substrate layer. Among them, the function of the low acoustic resistance is to prevent the signal in the piezoelectric film layer from leaking to the substrate layer, so as to reduce the loss of the radio frequency signal of the surface acoustic wave filter. [0003] In the prio...
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IPC IPC(8): H03H3/02H03H3/08H03H9/02H03H9/54H03H9/64
CPCH03H3/02H03H3/08H03H9/54H03H9/6489H03H9/02543H03H9/02818H03H2003/023
Inventor 李洋洋李真宇杨超张涛
Owner JINAN JINGZHENG ELECTRONICS