Transient voltage suppression protection device with high maintaining voltage and electrostatic discharge circuit

A technology of transient voltage suppression and high maintenance voltage, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of unable to maintain voltage, achieve the effect of increasing base length, suppressing positive feedback, and increasing maintenance voltage

Active Publication Date: 2022-03-01
江苏应能微电子有限公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a transient voltage suppression protection device with high sustain voltage and an electrostatic discha

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transient voltage suppression protection device with high maintaining voltage and electrostatic discharge circuit
  • Transient voltage suppression protection device with high maintaining voltage and electrostatic discharge circuit
  • Transient voltage suppression protection device with high maintaining voltage and electrostatic discharge circuit

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] It should be noted that the features and embodiments in the present invention can be bonded to each other in the case of an unable conflict. The present invention will be described in detail below with reference to the accompanying drawings.

[0032] In order to better understand the present invention, the technical solutions in the embodiments of the present invention will become apparent to those skilled in the Embodiments of the invention, not all of the embodiments. Based on the embodiments in the present invention, those of ordinary skill in the art may belong to the scope of the present invention in the range of the present invention without all other embodiments obtained without making creative labor.

[0033] It should be noted that the specification and claims of the present invention and the terms "first", "second", "second", or the like are used to distinguish a similar object without having to describe a particular order or award order. It should be understood ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of semiconductors, and particularly discloses a transient voltage suppression protection device with high maintaining voltage, which comprises a first conductive type substrate; a second conductive type well; a low-voltage second conductive type well and a low-voltage first conductive type well; a first N + region and a first P + region; a second N + region and a second P + region; the first P + region is close to the second N + region; a groove is formed in the junction position of the low-voltage second conductive type well and the low-voltage first conductive type well, a third N + region is arranged in the groove, and the groove is divided into at least two parts by the third N + region; the first N + region and the first P + region are connected to form an anode metal end of the transient voltage suppression protection device; and the second N + region and the second P + region are connected to form a cathode metal end of the transient voltage suppression protection device. The invention further discloses an electrostatic discharge circuit structure. According to the transient voltage suppression protection device with the high maintaining voltage, the maintaining voltage can be increased under the condition that the area of the device is not increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppression protection device with high sustain voltage and an electrostatic discharge circuit structure. Background technique [0002] ESD (Electro-static discharge, electrostatic discharge) is ubiquitous in the manufacturing, packaging, testing and use of chips, and the accumulated electrostatic charge will flow in nanoseconds to microseconds with a current of several amperes or tens of amperes. When released, the instantaneous power is as high as tens or hundreds of watts, which is extremely destructive to the chips in the circuit system. According to statistics, more than 35% of chip failures are caused by ESD damage. Therefore, in the design of chips or systems, the design of electrostatic protection modules is directly related to the functional stability and system reliability of the circuit system, which is extremely important for electronic pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/02
CPCH01L27/0248H01L27/0296
Inventor 朱伟东赵泊然
Owner 江苏应能微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap