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Maintaining voltage raising method

A technology for maintaining voltage and silicon devices, which is applied to circuits, electrical components, electric solid-state devices, etc., and can solve the problem that the maintenance voltage of devices is difficult to increase

Active Publication Date: 2014-12-03
北京中科微投资管理有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thyristor is an ideal electrostatic protection device, but due to its own positive feedback characteristics, the maintenance voltage of the device is limited within 1~2V and it is difficult to increase

Method used

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Examples

Experimental program
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Effect test

preparation example Construction

[0020] The SOI high sustaining voltage thyristor device prepared by the preparation process provided by the invention is used as an electrostatic protection device in the field of electrostatic protection, and has excellent electrostatic protection performance. When SOI thyristor with parasitic PNPN, PNPNP or NPNPN structure is applied in the field of electrostatic protection, the minimum voltage required to maintain the device working in the hysteresis region is improved through this process, reducing the risk of device latch-up and improving device reliability.

[0021] A method for increasing the sustain voltage provided by the present invention uses SOI technology to manufacture SOI thyristor devices with parasitic PNPN, PNPNP or NPNPN structures, and embeds such as diodes and diode strings in the parasitic transistor feedback paths of SOI thyristor devices. Semiconductor components such as transistors or MOS tubes that can suppress the positive feedback of the thyristor, ...

Embodiment 1

[0025] Such as figure 1 As shown, a kind of SOI high sustain voltage thyristor device made by using the method for increasing the sustain voltage provided by the present invention includes: 10 is a buried oxide layer, and the material is silicon dioxide; 11 is a top oxide layer, which is used to make an SOI device main area of ​​. In this example, an N well 12 and a P well 13 are formed in the P-type doped top oxide layer 11 with appropriate concentrations. As shown in the figure, P-type or N-type impurities are injected to form a high-concentration P+ region or a high-concentration N+ region, and an SOI thyristor device with a PNPN parasitic structure is formed between the anode and the cathode. An embedded PMOS transistor is formed by self-aligning the polycrystalline gate 14 . This MOS tube can suppress positive feedback between parasitic PNP and NPN transistors, and increase the sustaining voltage of this thyristor device as an electrostatic protection device.

[0026] ...

Embodiment 2

[0028] Such as image 3 As shown, a kind of SOI high sustain voltage thyristor device made by using the method for increasing the sustain voltage provided by the present invention includes: 30 is a buried oxide layer, and the material is silicon dioxide; 31 is a top oxide layer, which is used to make an SOI device main area of ​​. In this example, an N well 32 and a P well 33 are formed in the P-type doped top oxide layer 31 with appropriate concentrations. As shown in the figure, P-type or N-type impurities are injected to form a high-concentration P+ region or a high-concentration N+ region, and an SOI thyristor device with a PNPN parasitic structure is formed between the anode and the cathode. As shown in the figure, a high sustaining voltage silicon controlled rectifier embedded in a diode or diode string can be made, and the diode or diode string can suppress positive feedback between parasitic PNP and NPN transistors, and increase the holding voltage of the silicon cont...

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Abstract

The invention discloses a maintaining voltage raising method. The method comprises the following steps: an SOI (Silicon On Insulator) silicon-controlled device with a parasitic PNPN, PNPNP or NPNPN structure is manufactured by utilizing the SOI technology; and a semi-conductor element is embedded into a parasitic transistor feedback path of the SOI silicon-controlled device and used for inhibiting positive feedback of the controllable silicon per se and promoting the maintaining voltage of the controllable silicon serving as a static protective device. According to the maintaining voltage raising method provided by the invention, the SOI silicon-controlled device with the parasitic PNPN, PNPNP or NPNPN structure is manufactured by utilizing the SOI technology, and the semi-conductor element, such as a diode, a diode string, a transistor, an MOS (Metal Oxide Semiconductor) tube or the like, which can inhibit positive feedback of the controllable silicon, is embedded into the parasitic transistor feedback path of the SOI silicon-controlled device, and used for inhibiting the positive feedback of the controllable silicon per se and promoting the maintaining voltage of the controllable silicon serving as a static protective device. When the controllable silicon provided with high maintaining voltage and serving as the static protective device is applied in the static protection field, excellent static protection performance is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for increasing sustain voltage. Background technique [0002] Static electricity exists all the time in nature. When the external environment of the chip or the static charge accumulated inside the chip flows into or out of the chip through the pins of the chip, the instantaneous current (peak value can reach several amperes) or voltage will damage the integrated circuit. circuit, making the chip function invalid. With the development of the semiconductor industry, the SOI process is becoming more and more mature, and SOI devices are widely used in various fields. Due to the inherent limitations of the SOI process itself, SOI electrostatic protection has always been an important part that cannot be ignored in the production and application of SOI devices. Thyristor is an ideal electrostatic protection device, but due to its own positive feedback characteristi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L21/822
Inventor 姜一波曾传滨
Owner 北京中科微投资管理有限责任公司
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