Transient voltage suppression protection device and electrostatic discharge circuit with high sustain voltage

A technology of transient voltage suppression and high maintenance voltage, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of unable to maintain voltage, achieve the effect of increasing base length, suppressing positive feedback, and increasing maintenance voltage

Active Publication Date: 2022-05-17
江苏应能微电子股份有限公司
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a transient voltage suppression protection device with high sustain voltage and an electrostatic discharge circuit structure, which solves the problem in the related art that a better sustain voltage cannot be achieved in a limited area

Method used

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  • Transient voltage suppression protection device and electrostatic discharge circuit with high sustain voltage
  • Transient voltage suppression protection device and electrostatic discharge circuit with high sustain voltage
  • Transient voltage suppression protection device and electrostatic discharge circuit with high sustain voltage

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Embodiment Construction

[0031] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0032] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments of some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0033] It should be noted that the terms "f...

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Abstract

The invention relates to the technical field of semiconductors, and specifically discloses a transient voltage suppression protection device with a high sustain voltage, which includes: a first conductivity type substrate; a second conductivity type well; a low voltage second conductivity type well and a low voltage first conductivity type well A conductivity type well; the first N+ region and the first P+ region; the second N+ region and the second P+ region; the first P+ region is close to the second N+ region; the junction of the low voltage second conductivity type well and the low voltage first conductivity type well A groove is arranged at the position, and a third N+ region is arranged in the groove, and the groove is divided into at least two parts by the third N+ region; the first N+ region and the first P+ region are connected to form the anode metal terminal of the transient voltage suppression protection device ; The second N+ region is connected to the second P+ region to form the cathode metal terminal of the transient voltage suppression protection device. The invention also discloses an electrostatic discharge circuit structure. The transient voltage suppression protection device with high sustain voltage provided by the present invention can increase the sustain voltage without increasing the area of ​​the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppression protection device with high sustain voltage and an electrostatic discharge circuit structure. Background technique [0002] ESD (Electro-static discharge, electrostatic discharge) is ubiquitous in the manufacturing, packaging, testing and use of chips, and the accumulated electrostatic charge will flow in nanoseconds to microseconds with a current of several amperes or tens of amperes. When released, the instantaneous power is as high as tens or hundreds of watts, which is extremely destructive to the chips in the circuit system. According to statistics, more than 35% of chip failures are caused by ESD damage. Therefore, in the design of chips or systems, the design of electrostatic protection modules is directly related to the functional stability and system reliability of the circuit system, which is extremely important for electronic pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0248H01L27/0296
Inventor 朱伟东赵泊然
Owner 江苏应能微电子股份有限公司
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