Method for increasing maintaining voltage of electrostatic protective device

A technology for maintaining voltage and electrostatic protection, which is applied in the field of increasing the maintaining voltage of electrostatic protection devices, and can solve problems such as difficulty in increasing the maintaining voltage

Active Publication Date: 2012-07-11
BEIJING YANDONG MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to its own positive feedback characteristics, thyristor devices have excellent electrostatic protection performance when used in th...

Method used

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  • Method for increasing maintaining voltage of electrostatic protective device
  • Method for increasing maintaining voltage of electrostatic protective device
  • Method for increasing maintaining voltage of electrostatic protective device

Examples

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preparation example Construction

[0024] When the thyristor with parasitic PNPN, PNPNP or NPNPN structure prepared by the preparation process provided by the present invention is applied in the field of electrostatic protection, the minimum voltage required to maintain the device working in the hysteresis region is improved through this process, reducing The risk of device latch-up is reduced and device reliability is improved.

[0025] A method for increasing the maintenance voltage of an electrostatic protection device provided by the present invention is to manufacture thyristor devices with parasitic PNPN, PNPNP, and NPNPN structures on a semiconductor substrate, and to embed such as diodes and diodes in the feedback path of the parasitic transistors of the thyristor devices. Semiconductor components such as strings, transistors or MOS tubes that can suppress the positive feedback of the thyristor, suppress the positive feedback of the thyristor itself, and increase the maintenance voltage of the thyristor ...

Embodiment 1

[0029] Such as figure 1 As shown, a kind of method that the present invention provides to improve the maintenance voltage of electrostatic protection device, at first forms the thyristor device of PNPN structure on the semiconductor substrate, embeds MOS tube device on the positive feedback path of parasitic PNP and NPN transistor, suppresses The positive feedback between the parasitic PNP and NPN transistors increases the holding voltage of the thyristor device as an electrostatic protection device. For example, an N well 12 of appropriate concentration is formed on a P-type semiconductor substrate or epitaxy 11 of bulk silicon, and P-type or N-type impurities are implanted to form a high-concentration P+ region or a high-concentration N+ region, which is connected to the anode and cathode as shown in the figure. A parasitic structure of PNPN is formed between them. An embedded PMOS transistor is formed by self-alignment of the polycrystalline gate 13, and a parasitic MOS hi...

Embodiment 2

[0032] Such as image 3 As shown, a method for improving the maintenance voltage of an electrostatic protection device provided by the present invention includes first forming a thyristor device with a PNPN structure on a semiconductor substrate, and embedding a diode or a diode string on the positive feedback path of the parasitic PNP and NPN transistors, Suppress the positive feedback between parasitic PNP and NPN transistors, and increase the maintenance voltage of the thyristor device as an electrostatic protection device. For example, an N well 12 of appropriate concentration is formed on a P-type semiconductor substrate or epitaxy 11 of bulk silicon, and P-type or N-type impurities are implanted to form a high-concentration P+ region or a high-concentration N+ region, which is connected between the anode and the N+ region as shown in the figure. A parasitic structure of PNPN is formed between the cathodes. As shown in the figure, a high sustaining voltage silicon contro...

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PUM

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Abstract

The invention discloses a method for increasing maintaining voltage of an electrostatic protective device. The method comprises the following steps of: first, making a controlled silicon device with a parasitic PNPN, PNPNP or NPNPN structure on a semiconductor substrate; and then embedding a semiconductor element into a controlled silicon device parasitic transistor feedback path, wherein the semiconductor element is used for inhibiting positive feedback of the controlled silicon and increasing the maintaining voltage of the controlled silicon when the controlled silicon is used as the electrostatic protective device. By using the method for increasing the maintaining voltage of the electrostatic protective device, the controlled silicon device with the parasitic PNPN, PNPNP or NPNPN structure is made on the semiconductor substrate and the semiconductor element capable of inhibiting the positive feedback of the controlled silicon, like a diode, a diode string, a transistor, an MOS (Metal Oxide Semiconductor) tube or the like, is embedded into the controlled silicon device parasitic transistor feedback path so that the positive feedback of the controlled silicon is inhibited and the maintaining voltage of the controlled silicon when the controlled silicon is used as the electrostatic protective device is increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for increasing the sustain voltage of an electrostatic protection device. Background technique [0002] Static electricity exists all the time in nature. When the external environment of the chip or the static charge accumulated inside the chip flows into or out of the chip through the pins of the chip, the instantaneous current (peak value can reach several amperes) or voltage will damage the integrated circuit. circuit, making the chip function invalid. Throughout the entire life cycle of an integrated circuit (IC), from manufacturing, packaging, transportation, assembly, and even in the finished IC product, it is always facing the impact of electrostatic discharge (ESD). ESD protection is costly to both electronics manufacturers and consumers. When the human body can feel the presence of static electricity, the static electricity generated has reached tens...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/822
Inventor 姜一波杜寰
Owner BEIJING YANDONG MICROELECTRONICS
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