ICP etching machine

Abstract

The invention belongs to the technical field of etching equipment, and discloses an ICP (Inductively Coupled Plasma) etching machine. The ICP etching machine comprises a base, a lower bracket, an upper bracket, an upper cover, an adjusting ring, a guide plate and a coil, the lower support is installed on the base, the upper support is installed on the lower support, the upper cover is installed on the upper support, and the coil is installed on the upper cover. The upper cover, the inner wall of the upper support, the inner wall of the lower support and the base jointly define a closed cavity. The upper cover is also provided with an air inlet; the guide plate is arranged on the adjusting ring; the adjusting ring is used for driving the guide plate to move close to or away from the base; the flow guide plate is used for dividing the cavity into a first cavity and a second cavity, the flow guide plate is provided with a plurality of flow channel holes, and the first cavity and the second cavity are communicated through the flow channel holes. According to the invention, the adjustment of the discharge gap and the adjustment of the flow field distribution can be realized; energy is saved, efficiency is improved, and etching quality is improved; and meanwhile, the etching damage to the upper bracket can be reduced, and the service life of the etching machine is prolonged.

Description

technical field [0001] The invention relates to the field of ICP etching equipment, in particular to an ICP etching machine. Background technique [0002] ICP (Inductively Coupled Plasma) etching, that is, reactive coupled plasma etching, is a very important semiconductor dry etching technology. The etching quality of the ICP etching machine is directly related to the discharge gap and flow field distribution. The discharge gap has a direct impact on the internal parameters of the plasma, especially the temperature of the electrons in the plasma. Reducing the discharge gap can increase the temperature of the electrons in the plasma, thereby increasing the collision between the electrons and the neutral gas. frequency, thereby achieving the effect of increasing the etching rate; but too small a discharge gap will cause the etching space to be compressed, the flow field will spread unevenly, and further lead to a decline in the etching quality; at the same time, the power con...

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Problems solved by technology

[0004] In the existing ICP etching machine, when adjusting the discharge gap, it is necessary to disassemble the machine and replace the adjustment bracket 200' of different thickness (this operation is equivalent to directly replacing part of the cavity), so as to adjust the discharge gap. The efficiency of adjusting the discharge gap is very low

Moreover, the existing ICP etching machine lacks the control of the flow field flow, and the neutral gas is directly introduced into the cavity of the adjustment bracket 200' from the single air inlet 410', and the plasma is excited in the cavity to be etched. The object is etched, which increases the inhomogeneity of the neutral gas in the flow field, and further aggravates the inhomogeneity of the plasma in the cavity, and it is difficult to improve the etching quality to a large extent.

[0005] At the same time, the upper support frame 300' is completely exposed to the plasma atmosphere. In the prior art, a layer of anodic oxidation is performed on the metal surface of the support frame 300' to protect the upper support frame 300'. However, in actual etching, especially When the etching gas contains halogen elements with strong chemical activity, the plasma has a strong physical and chemical corrosion effect on the inner wall of the chamber. According to different etching gases, the etching rate of the plasma on the anodic oxide layer is also different. As a result, the anodic oxide layer will be completely etched away under complex etching gas conditions, thereby losing the ability to protect the etching machine support frame 300', resulting in a significant decrease in the life of the support frame 300'

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