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High conductive under shield for processing chamber

A technology for processing chambers and shields, applied in electrical components, circuits, discharge tubes, etc., to solve problems such as the inability of processing kits to provide flow conductivity

Pending Publication Date: 2022-04-08
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for certain plasma cleaning or etch processes with increased contamination or etched material, the process suite may not provide adequate flow conductivity for removal of displaced material

Method used

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  • High conductive under shield for processing chamber
  • High conductive under shield for processing chamber
  • High conductive under shield for processing chamber

Examples

Experimental program
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Embodiment Construction

[0016] Embodiments of processing kits for use in processing chambers are provided herein. The processing chamber may be configured to perform any suitable processing on the substrate. In some embodiments, the processing chamber is configured to perform an etch process, a deposition process, or a pre-clean process. The processing chamber includes a substrate support to support the substrate. A pump can be coupled to the processing chamber to remove particles from the interior volume of the processing chamber. The inventors have discovered that substrates comprising organic materials have increased levels of outgassing during processing compared to conventional substrates. The processing kit is arranged around the substrate support to advantageously reduce or avoid deposition of unwanted material on the chamber body of the processing chamber, while also providing high conductivity through the processing kit.

[0017] figure 1 A schematic side view of a processing chamber (eg...

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PUM

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Abstract

Embodiments of a processing kit for use in a processing chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular ring configured to surround a substrate support; and an annular lip extending from an upper surface of the annular ring, where the annular ring includes a plurality of ring slots, extending through the annular ring and arranged along the annular ring at regular intervals, and where the annular lip includes a plurality of lip slots, extending through the annular lip and arranged along the annular lip at regular intervals.

Description

technical field [0001] Embodiments of the present disclosure relate generally to substrate processing equipment, and more particularly, to processing kits for use in substrate processing equipment. Background technique [0002] Known process chambers are configured to perform pre-cleaning processes. For example, these chambers are configured to remove metal contact pads on the substrate before physical vapor deposition (PVD) is used to deposit one or more barrier layers (eg, titanium (Ti), copper (Cu), etc.) on the substrate. Native oxides and removal of other materials. The pre-clean chamber typically uses ion impact (including by RF plasma) to remove native oxides and other materials on the metal contact pads. For example, a pre-clean process can etch native oxides and materials from the substrate. The pre-clean process is configured to reduce contact resistance between metal contacts on the substrate to enhance performance and power consumption of integrated circuits o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32715H01J37/32642H01J37/32834H01J37/32633H01J37/32495H01J37/32477H01J2237/2007H01J2237/335
Inventor S·巴布A·朱普迪欧岳生魏俊琪K·莫和田优一张康
Owner APPLIED MATERIALS INC