Memory array and memory system

Abstract

The invention discloses a memory array and a memory system. In one embodiment, the memory array comprises a first memory unit group and a second memory unit group, each switch in the first switch group comprises a first electrode connected to the first electrode of the first memory unit subset and a second electrode; each switch in the second switch group comprises a first electrode connected to the first electrode of the second memory unit subset and a second electrode; and a third switch group, each of which includes a first electrode connected to the first global bit line, and a second electrode connected to the second electrode of the first switch group and the second electrode of the second switch group.

Description

technical field [0001] The present disclosure relates to a memory, and more particularly, to a memory array and a memory system. Background technique [0002] The development of electronic devices, such as computers, portable devices, smart phones, internet of things (IoT) devices, etc., has contributed to an increase in the demand for memory devices. In general, memory devices can be volatile memory devices and non-volatile memory devices. Volatile memory devices can store data when power is supplied, but may lose the stored data once power is removed. Unlike volatile memory devices, non-volatile memory devices retain data even after power is removed, but at a slower rate than volatile memory devices. SUMMARY OF THE INVENTION [0003] An aspect of the present disclosure provides a memory array including: a first memory cell set and a second memory cell set, a first switch group, a second switch group, and a third switch group. Wherein, each memory cell group extends a...

AI Technical Summary

Problems solved by technology

Unlike volatile memory devices, nonvolatile memory devices retain data even after power is removed, but at a slower rate than volatile memory devices

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