Microwave plasma chemical vapor deposition device and system
A technology of chemical vapor deposition and microwave plasma, which is applied in the field of plasma, can solve problems such as uneven plasma reactions, and achieve the effects of solving uneven plasma reactions, improving energy capacity, and increasing energy import
Pending Publication Date: 2022-08-02
JIHUA LAB
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Problems solved by technology
[0003] At present, the MPCVD device structure used to realize MPCVD technology, by setting a single microwave transmission path, microwaves are introduced into the plasma reaction chamber to stimulate the plasma reaction, and the single microwave transmission path limits the introduction of microwave energy into the plasma chamber, resulting in ion The problem of uneven plasma reaction in the bulk reaction chamber
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[0030] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that the embodiments of the present disclosure and the features in the embodiments may be combined with each other under the condition of no conflict.
[0031] Many specific details are set forth in the following description to facilitate a full understanding of the present disclosure, but the present disclosure can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present disclosure, and Not all examples.
[0032] The chemical vapor deposition technology uses the mixed gas containing the elements required for thin film deposition as the source gas, a series of complex elementary reactions are carried out in the reaction chamber, and a series of surface reactions a...
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The invention relates to a microwave plasma chemical vapor deposition device and system. The microwave plasma chemical vapor deposition device comprises a rectangular waveguide, the rectangular waveguide comprises a plurality of microwave transmission paths, the plurality of microwave transmission paths share a microwave leading-in port, and microwave leading-out ports of the plurality of microwave transmission paths are separately arranged, the microwave lead-in ports are used for conducting led-in microwaves to the corresponding microwave lead-out ports through the corresponding microwave transmission paths; the plasma reaction cavity comprises a plurality of microwave inlet ports, and the microwave outlet ports are communicated with the microwave inlet ports in a one-to-one correspondence manner; and the electromagnetic conversion structures are arranged corresponding to the communication positions of the microwave leading-out ports and the microwave inlet ports and are in contact with the rectangular waveguides. According to the technical scheme disclosed by the invention, the energy capacity of conducted microwaves can be improved, so that the energy introduction in the plasma reaction cavity is increased, and the uniformity of plasma reaction is improved.
Description
technical field [0001] The present disclosure relates to the technical field of microwave plasma, and in particular, to a microwave plasma chemical vapor deposition device and system. Background technique [0002] Microwave Plasma Chemical Vapor Deposition (MPCVD) technology is a new technology mainly used in thin film manufacturing developed in recent decades. It has many advantages such as high product quality, strong controllability and no pollution. The field of thin film manufacturing has been widely used. [0003] At present, the structure of the MPCVD device used to realize the MPCVD technology is to set a single microwave transmission path and introduce the microwave into the plasma reaction chamber to stimulate the plasma reaction. The problem of uneven plasma reaction in the bulk reaction chamber. SUMMARY OF THE INVENTION [0004] In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure prov...
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Login to View More IPC IPC(8): H05H1/46C23C16/511
CPCH05H1/4622C23C16/511Y02P70/50
Inventor 李嘉锋陈浩侯少毅
Owner JIHUA LAB