Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor integrated circuit

A technology of integrated circuits and semiconductors, applied in the manufacture of circuits, logic circuits, semiconductors/solid-state devices, etc.

Inactive Publication Date: 2005-12-14
SOCIONEXT INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specific instructions are given below

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor integrated circuit
  • Semiconductor integrated circuit
  • Semiconductor integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0112] Figure 9 and Figure 10 Shows Example 1 of the present invention. Figure 9 (a) and (c) are configuration examples for an inverter circuit. The figure (a) is an inverter circuit in which PMOS 100 and NMOS 101 are connected in series, and the connection point of PMOS 100 and NMOS 101 is output terminal 102 .

[0113] In the inverter circuit, the source terminal of the PMOS 100 (first MOS transistor) 100 is connected to the terminal (power supply terminal) 18 of the power generator (conductance adjustment device and current adjustment device) 17, and the well terminal as the control terminal Connect to Terminal 19. In the operating state of the inverter circuit, both terminals 18, 19 are set to the first supply potential. In the non-operating state, the power supply potential of the terminal 18 is lowered to the second power supply potential Vdd2 (Vdd2<

Embodiment 2

[0135] Next, Embodiment 2 of the present invention will be described. In this embodiment, the present invention is applied to SRAM. Although it is considered more difficult to apply the present invention to an SRAM than an inverter circuit, it is actually the same as an inverter circuit according to the characteristics of FIG. 7 .

[0136] Figure 11 is a structural diagram of the most widely used SRAM at present. The inverter circuit 17a (first signal processing circuit) is composed of a PMOS (first PMOS transistor) 100a and an NMOS (first NMOS transistor) 101a connected in series, and the connection point between the drain terminals thereof is an output terminal (the first output terminal). terminal) 102a, and the connection point between the gate terminals is an input terminal (first input terminal) 103a. In addition, the inverter circuit 18a (second signal processing circuit) is also composed of a PMOS (second PMOS transistor) 100b and an NMOS (second NMOS transistor) 101...

Embodiment 3

[0148] Next, Embodiment 3 of the present invention will be described. This embodiment is to apply the present invention to a NAND circuit. Such as Figure 16As shown, the structure of the 2-input NAND circuit is different from that of the inverter circuit in that the NMOSs 25 and 26 are connected in series or the PMOSs 27 and 28 are connected in parallel.

[0149] Logic circuits such as NAND circuits and NOR circuits including the inverter circuits discussed above are static circuits. In the case of a static logic circuit, the point that the output is determined by switching the PMOS and NMOS on and off is the same. For example, when the input terminals 29 and 30 are set at H level and H level, the output terminal 31 becomes L level. NMOS said Figure 5 The characteristics of Non in (b), but by making the characteristics of Non correspond to the case of replacing the series connection of NMOS25 and NMOS26 with one NMOS, and making the Poff characteristics of PMOS correspon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor integrated circuit, in the working state of the inverter circuit, both the terminal (18) and the terminal (19) are set to the first power supply potential Vdd1. In the non-operating state, the power supply potential of the terminal (18) is lowered to the second power supply potential Vdd2 (Vdd2<<Vdd1). At this time, if the input signal of the inverter circuit is the potential Vdd2 of H level, the output signal needs to maintain the ground potential (L level) in the operating state. In order to maintain, the relationship between the conductance Gp of the PMOS transistor and the conductance Gn of the NMOS transistor must be Gp<Gn. Therefore, setting the well terminal (19) of the PMOS transistor to a potential higher than the dropped power supply potential Vdd2 keeps Gp<Gn. Realize low power consumption.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit. Background technique [0002] In the past, in order to reduce the current in the non-operating state of the semiconductor integrated circuit, proposed figure 1 The semiconductor integrated circuit shown. Next, this semiconductor integrated circuit will be described. [0003] In the same figure, a PMOS transistor 4 (hereinafter abbreviated as PMOS) is connected between the power supply terminal 2 of the inverter circuit 1 and the power supply potential 7, and a PMOS transistor 4 is connected between the ground terminal 3 of the inverter circuit 1 and the ground potential 8. NMOS transistor 5 (hereinafter, simply referred to as NMOS). In the manufacturing stage, the threshold values ​​(absolute values) of these transistors are set larger than those of the transistors constituting the inverter circuit 1 . Therefore, when the inverter circuit 1 is in the non-operating state, as shown ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238G05F1/56H01L21/8234H01L27/088H01L27/092H03K19/00H03K19/0948
CPCG05F1/56H03K19/0016
Inventor 楠本馨一熊丸知之安藤贵史后藤哲治
Owner SOCIONEXT INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com