Unlock instant, AI-driven research and patent intelligence for your innovation.

Fast open/close photoelectric generator for photoelectric relay

A technology of photoelectric generators and devices, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as reducing off-time and increasing on-time

Inactive Publication Date: 2005-12-21
INFINEON TECH AMERICAS CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Further reduction in SOI thickness further reduces off time but further increases on time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fast open/close photoelectric generator for photoelectric relay
  • Fast open/close photoelectric generator for photoelectric relay
  • Fast open/close photoelectric generator for photoelectric relay

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] refer to figure 1 with 2 , showing a PVG of the type shown in U.S. Patent No. 5,549,762, wherein a wafer 20 is supported or processed ( figure 1 ) has a thin epitaxial SOI silicon layer 21 adhered thereto with an oxide insulating layer 22 . A plurality of wells 30 , 31 , 32 , 33 and 34 are defined by webs 35 of non-conductive polysilicon filler. Each well 30-34 has a bottom N + Layer 36. Wall plate 35 may be formed with a thin oxide layer 35a and intrinsic polysilicon fill 35b in the etched trench. Each well 30-34 has a shallow P + Diffusion regions 40-44 and N + The contact diffusion area ( figure 1 50 and 51) to connect in series figure 1 unit shown.

[0025] According to the present invention, formed in figure 1 A plurality of slotted wells schematically shown as 60-63 are made vertically through the SOI layer 21 and identical slotted wells are provided on the entire surface of the SOI layer 21 ( figure 2 ). Each well is formed as the walls 35 of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

will be in SOIN - The photoelectric generator formed on the layer is subdivided into isolation slots connected in series, thereby subdividing the isolation slots by a matrix of slotted wells. Will P + A junction is formed into the top surface of each well to define a photo-generating junction for its respective well.

Description

[0001] This application claims priority to US Provisional Application No. 60 / 337,423, filed December 6,2001. technical field [0002] This invention relates to semiconductor photovoltaic generators and, more particularly, to new structures for photovoltaic generators which increase their turn-off speed. Background technique [0003] Photovoltaic generators ("PVGs") are well known and are disclosed, for example, in US Pat. These devices are used to provide turn-on control signals for semiconductor devices, such as power MOSFETs, etc., where the input control signal is optically isolated from the MOSFET input. The entire relay is known as a photorelay (PVR), such that in a PVR an input radiation signal from an LED etc. illuminates the surface of a photoelectric generator (PVG) to generate an output gate to the gate of a MOSFET or other gated switching device Voltage. [0004] The frequency response of the PVR is at least partially limited by the time the PVG is turned on and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/00H01L27/142
CPCH01L31/0475Y02E10/547Y02E10/50
Inventor S·C·利佐特
Owner INFINEON TECH AMERICAS CORP