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Method for evaluating shape of wafer, wafer and method for selecting wafer

An evaluation method and wafer technology, which can be applied to measurement devices, instruments, electrical components, etc., and can solve problems such as inability to be accurately evaluated.

Inactive Publication Date: 2006-04-26
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In particular, the flatness of the inner portion of the wafer obtained by the above-mentioned SFQR, etc., has a problem that it cannot be accurately evaluated at the outer peripheral portion of the wafer with good evaluation accuracy, especially near the boundary between the chamfered portion and the main surface of the wafer. Happening

Method used

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  • Method for evaluating shape of wafer, wafer and method for selecting wafer
  • Method for evaluating shape of wafer, wafer and method for selecting wafer
  • Method for evaluating shape of wafer, wafer and method for selecting wafer

Examples

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Embodiment 1

[0097] An example related to the shape evaluation method of the present invention will be described. In this example, an 8-inch specular wafer (a wafer with a diameter of 200 mm and a chamfered portion with an outer circumference of 0.5 mm) manufactured by a general manufacturing process was evaluated. This wafer is referred to as S1.

[0098] Shape evaluation is to measure the entire surface of the wafer (excluding the outer periphery of the chamfered portion 0.5mm) at intervals of 0.95 mm, and sequentially memorize the thickness of the wafer measured above, and obtain the following shape from the memorized shape. figure 1 The profile (shape) from the center of the wafer to the edge (98.5 mm from the center) is shown, and the distance from the center (diametrically) to any position X (70 mm from the center, 98.5 mm from the edge) is used. 30mm), calculate the reference line by the least square method, then analyze the difference between the thickness at any position and the ...

Embodiment 2

[0109] In order to confirm the above findings, wafers manufactured in a plurality of wafer processing steps were evaluated by the above-mentioned shape evaluation method. Specifically, the wafer is manufactured by changing the wafer processing process so that the uniformity value of the outer peripheral portion of the B parameter can be reduced.

[0110] The wafer processing process is a slicing process that generally uses a wire saw to slice a single crystal ingot to obtain a thin disc-shaped wafer; in order to prevent cracks and gaps in the wafer obtained by the slicing process, its outer periphery is chamfered Partially used chamfering process; planarization process of lapping, surface wheel grinding, etc. to flatten the wafer; etching process for removing processing distortion left (residue) on the chamfered and planarized wafer; A polishing process for making the surface of the wafer mirror-like; and a cleaning process for cleaning the polished wafer to remove polishing a...

Embodiment 3

[0131] Even in the wafer processing shown in the example, the uniformity of the B parameter cannot be completely made below 600 nm. Therefore, wafers are evaluated by the shape evaluation method of the present invention, and after selecting wafers falling within the scope of the present invention, they are placed in a device process to implement a manufacturing process. Specifically, a wafer whose surface characteristic B has a uniformity of 600 nm or less in the peripheral portion of the wafer [these are surface characteristics (A-B) of which the uniformity of the peripheral portion of the wafer is 400 nm or less] is placed in a stepper process, and the device is observed Actions. As a result, it was confirmed that the stop of the device did not occur at all.

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Abstract

The present invention is to provide a method for evaluating the shape of a wafer for evaluating the shape quality of a wafer from a viewpoint different from the conventional SFQR and the like, a wafer with few problems in an exposure apparatus, and a sorting capable of sorting a wafer with good quality method. Therefore, in the present invention, a plurality of wafer shape contours (shapes) over the entire circumference of the wafer are obtained from the center of the wafer to the edge at predetermined angular intervals, and the first number of reference lines to be calculated for each contour is set. One area is on the center side of the wafer, and a second area is set on the outer periphery of the wafer outside the first area, and the reference line calculated in the first area is extended to the second area to analyze the shape of the second area (measured value) and the difference between the reference line (reference value) in the second area (measured value—reference value), the maximum value of the values ​​is calculated as the surface property A and the minimum value as the surface property B, and from the The uniformity of the shape of the outer peripheral portion of the wafer was evaluated by using the plurality of surface properties A and B obtained over the entire circumference.

Description

technical field [0001] The present invention relates to a method for evaluating the shape of a wafer represented by a silicon wafer, a wafer suitable for an exposure device, and a method for selecting wafers of good quality. Background technique [0002] In recent years, the high integration of semiconductor devices has been remarkable due to the rapid progress of semiconductor device technology, and along with this progress, the quality requirements for silicon wafers and the like are also extremely strict. And as one of the important quality characteristics required of the silicon wafer, there is a problem of the surface shape of the silicon wafer. The reason for this is that the high integration of semiconductor devices will lead to the miniaturization of the device size. An error occurs in the pattern. In addition, in order to effectively utilize the wafer, it is required to form a flat wafer up to the outermost periphery (the limit of the chamfered portion) of the mai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01B11/30G01B3/22G01B11/24H01L21/304
CPCG01B11/24H01L22/00
Inventor 小林诚小林修一
Owner SHIN-ETSU HANDOTAI CO LTD