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Non-volatile memory preventing antenna effect and its manufacture

A non-volatile, antenna-effect technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as component programming, affecting writing speed, and reducing voltage

Inactive Publication Date: 2006-07-05
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the voltage caused by the charge accumulated on the word line is lower than the breakdown voltage of the diode, the charge may still be trapped in the silicon nitride layer, causing the device to be programmed.
Moreover, in this way, the input voltage will be reduced, which will affect the writing speed

Method used

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  • Non-volatile memory preventing antenna effect and its manufacture
  • Non-volatile memory preventing antenna effect and its manufacture
  • Non-volatile memory preventing antenna effect and its manufacture

Examples

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no. 1 example

[0030] In order to prevent the antenna effect (Antenna Effect) caused by plasma during the production of the non-volatile memory, the present invention provides a non-volatile memory that prevents the antenna effect.

[0031] figure 1 It is a schematic top view of a non-volatile memory structure for preventing antenna effects according to the first embodiment of the present invention.

[0032] Please refer to figure 1 A word line 102 is covered on a substrate 100, and the word line 102 includes a high resistance portion 104 and a memory cell portion 106. The high-resistance portion 104 of the word line 102 is electrically connected to a ground doped region 108 in the substrate 100, and the memory cell portion 106 of the word line 102 is electrically connected to a metal interconnection line 110, and the high-resistance portion 104 is connected to the ground doped region 108 through the contact window 112; the memory cell portion 106 is connected to the metal interconnection lin...

no. 2 example

[0036] Figure 3A to Figure 3C Shown is a cross-sectional view of a manufacturing process of a non-volatile memory that prevents antenna effects according to the second embodiment of the present invention.

[0037] Please refer to Figure 3A , A substrate 300 is provided, a capture layer 302, a polysilicon layer 306, and a metal silicide layer 308 are sequentially formed on the substrate 300, and then the above-mentioned layers are patterned to form a portion having a higher resistance than other parts The high-resistance part 310 and the word line 304 of a memory cell part 312. For example, the high-resistance part 310 is narrower than other parts, so its resistance is higher than other parts of the word line 304. The capturing layer 302 is, for example, a silicon oxide / silicon nitride / silicon oxide (ONO) composite layer, and the material of the metal silicide layer 308 is, for example, tungsten silicide (WSi).

[0038] Next, please refer to Figure 3B , A ground doped region 314...

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Abstract

The non-volatile memory without antenna effect has structure including one character line to cover the substrate and with high resistance part memory unit part and memory unit part, and one trapping layer between the character line and the substrate. The high resistance part of the character line is connected electrically to one earthed doped area in the substrate, and the memory unit part of the character line is connected electrically to one metal interconnection.

Description

Technical field [0001] The present invention relates to a non-volatile memory and a manufacturing method thereof, and more particularly to a non-volatile memory that prevents antenna effect (Antenna Effect) and a manufacturing method thereof. Background technique [0002] One of the current methods of non-volatile memory is to first form a trapping layer on the substrate. If the body of the trapping layer is a silicon nitride layer, such a non-volatile memory is also called a silicon nitride layer. Read memory (Nitride Read Only Memory, NROM for short). Then, a polysilicon gate is formed on the capture layer, and finally a source region and a drain region are formed in the substrate on both sides of the capture layer. [0003] Plasma must be frequently used in the manufacturing process of silicon nitride read-only memory (NROM). However, when the instantaneous charge in the plasma is unbalanced, it will cause the charge to move along the metal. This phenomenon is called the anten...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112H01L27/10H01L21/8239H01L21/8246
Inventor 郭东政刘建宏潘锡树黄守伟
Owner MACRONIX INT CO LTD