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Non-volatile ROM and method for manufacturing the same

A read-only memory, non-volatile technology, used in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., to solve problems such as voltage reduction, component programming, and charge trapping

Inactive Publication Date: 2006-11-29
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the voltage is lower than the breakdown voltage of the diode, the charge may still be trapped in the silicon oxide / silicon nitride / silicon oxide (ONO) layer, causing the device to be programmed.
Moreover, in this way, the input voltage will be reduced, which will affect the writing speed

Method used

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  • Non-volatile ROM and method for manufacturing the same
  • Non-volatile ROM and method for manufacturing the same
  • Non-volatile ROM and method for manufacturing the same

Examples

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no. 1 example

[0029] Figure 1A to Figure 1E is a sectional view of the manufacturing process of a non-volatile read-only memory according to the first embodiment of the present invention.

[0030] Please refer to Figure 1A A non-volatile read-only memory unit 102 is formed in a substrate 100, and the non-volatile read-only memory unit 102 includes a trapping layer (TrappingLayer) 104 and a word line 106 thereon, wherein the material of the trapping layer 104 is, for example, A stacked structure composed of silicon oxide / silicon nitride / silicon oxide (Oxide-Nitride-Oxide, ONO for short) composite layer, a read-only memory using this material as the capture layer 104 is called a silicon nitride-only Read memory (Nitride Read Only Memory, referred to as NROM), and the word line 106 includes a polysilicon line 105a and a metal layer 105b, and the material of the metal layer 105b is, for example, tungsten silicide (WSi x ). The substrate 100 also includes an isolation region 108 for separati...

no. 2 example

[0036] The second embodiment of the present invention provides another non-volatile read-only memory manufacturing method, such as Figure 2A , Figure 2B , Figure 3A , Figure 3B , Figure 4A and Figure 4B shown.

[0037] Please refer to Figure 2A and Figure 2B, providing a substrate 200 with an isolation region 202 such as a field oxide layer, and then forming a capture layer 204 on the substrate 200, wherein the material of the capture layer 204 is, for example, a composite layer of silicon oxide / silicon nitride / silicon oxide (ONO) The stack structure formed. Next, a polysilicon layer and a metal silicide layer are sequentially formed on the substrate 200 . The above-mentioned layers are then patterned to form the word line (Word Line) 208 of the non-volatile read-only memory and the polysilicon line 206 below it, wherein the pattern size of the polysilicon line 206 and the word line 208 above the isolation region 202 is larger than other The part is small, and...

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Abstract

The non-volatile ROM has structure comprising one character line including one metal layer and one polysilicon layer formed on the substrate; one trapping layer between the character line and the substrate; and one protective polysilicon line formed on the substrate and connected electrically to the character line and earthed doped area on the substrate, with the protective polysilicon line having resistance higher than that of the character line.

Description

technical field [0001] The present invention relates to a read-only memory and its manufacturing method, and in particular to a non-volatile read-only memory and its manufacturing method. Background technique [0002] The current practice of non-volatile read-only memory is to form a trapping layer on the substrate first. The material of the trapping layer is a composite layer of silicon oxide / silicon nitride / silicon oxide (Oxide-Nitride-Oxide, ONO for short). The formed stacked (Stacked) structure, the read-only memory using this material as the capture layer is called Nitride Read Only Memory (NROM for short). Then, form a polysilicon gate on the silicon oxide / silicon nitride / silicon oxide (ONO) layer, and finally form a source region and a drain in the substrate on both sides of the silicon oxide / silicon nitride / silicon oxide (ONO) layer polar region. [0003] The plasma used in the manufacturing process of non-volatile silicon nitride read-only memory (NROM) will cause...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112H01L21/8246H10B20/00
Inventor 郭东政刘建宏潘锡树黄守伟
Owner MACRONIX INT CO LTD