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Method for synthesizing amorphous SiO2 coated SiC coaxial nano cable

A nano-cable and synthesis method technology, applied in the manufacture of coaxial cables, coaxial cables/analog cables, etc., can solve the problems of high synthesis temperature, complex synthesis process, unsuitable for large-scale production, etc., and achieves low synthesis temperature and synthesis technology. simple effect

Inactive Publication Date: 2006-11-22
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still some deficiencies in the existing methods for synthesizing coaxial nanocables, such as the need for high synthesis temperature (1800°C) or the complexity of the synthesis process, etc.; the amount of synthesized products is relatively small, which is not suitable for future scale-up production, but also limits people's research on the novel properties and possible applications of SiC coaxial nanocables

Method used

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  • Method for synthesizing amorphous SiO2 coated SiC coaxial nano cable
  • Method for synthesizing amorphous SiO2 coated SiC coaxial nano cable
  • Method for synthesizing amorphous SiO2 coated SiC coaxial nano cable

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Embodiment Construction

[0020] 1. Select commercially available Si powder with a purity of 99.5%, and spectrally pure SiO 2 Powder and C 3 h 6 gas as raw material. First of all Si powder and SiO 2 The powder is ball milled, and the ball milling is carried out on a planetary ball mill.

[0021] The process is as follows: respectively called Si powder and SiO 2 Each powder is 25g, placed in different resin ball mill jars;

[0022] At the same time, take different numbers of agate balls with different diameters according to the attached table and put them in the ball milling jar, then add an appropriate amount of ethanol as the ball milling agent, put the ball milling jar on the ball mill and clamp it. Turn on the ball mill, first ball mill at a slower speed of 130 rpm for 2 hours, then adjust the speed to 200 rpm, mill for 23 hours, and then rotate the ball mill in the opposite direction for 23 hours, totaling 48 hours of ball milling. Si powder and SiO after ball milling 2 Take out the powder a...

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Abstract

The invention discloses an amorphous SiO 2 The synthetic method of coating SiC coaxial nano-cable, (1) get a certain amount of raw material Si powder and SiO 2 powder for ball milling: (2) Then take the Si powder and SiO powder that have been ball milled and dried 2 Powder, according to Si:SiO 2 =1:1.2~1.5 Put it into an agate mortar and grind it to make it fully mixed; (3) Add catalyst to the C / C composite material substrate, and mix the Si powder and SiO 2 Put the powder mixed powder, C / C composite material substrate and carbon cloth into the graphite reaction chamber; (4) put the graphite reaction chamber into the vertical vacuum furnace of the graphite heating body; (5) raise the temperature of the furnace To 900-1000°C, vacuumize the furnace so that the pressure in the furnace is 53.3KPa; (6) When the furnace temperature rises to 1200-1300°C, turn on C 3 h 6 After 5-10 minutes of gas, keep warm for another 10-20 minutes, turn off the power and cool down to room temperature naturally. Because the gas-phase chemical reaction method is adopted, the synthesis process is simple, the temperature required for the synthesis is low, and it is beneficial to large-scale production.

Description

Technical field: [0001] The present invention relates to a kind of amorphous SiO 2 The synthesis method of coated SiC coaxial nanocable can synthesize semiconductor SiC with good performance as the core, and insulator SiO 2 A coaxial nanocable for the shell. Background technique: [0002] A coaxial nanocable refers to a nanowire whose core is a semiconductor or a conductor, the outer layer is covered with a heterogeneous shell, and the outer shell and the core nanowire are coaxial. Due to the unique properties of this kind of materials, rich scientific connotations, broad application prospects and strategic position in future nanostructure devices. Therefore, the researchers proposed the following method on how to obtain coaxial nanocables. Arc discharge method: It was proposed by French scientist Colliex in 1997, and C-BN-C nanotubes with sandwich geometry were obtained by this method [published in Suenaga K., Colliex C., Demoncy N., Loiseau A., Pascard H . Science 278 ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/016H01B11/18
Inventor 李镇江李贺军
Owner NORTHWESTERN POLYTECHNICAL UNIV